J
Jong Hyun Ahn
Researcher at Yonsei University
Publications - 320
Citations - 44695
Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.
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Pressure-induced chemical enhancement in Raman scattering from graphene-Rhodamine 6G-graphene sandwich structures
TL;DR: In this article, the authors introduce a new method to enhance the Raman signals of a graphene-Rhodamine 6G (R6G)-graphene sandwich structure by creating a magnet-induced static pressure to maximize the chemical contact between the R6G molecules and graphene.
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Observation of the inverse giant piezoresistance effect in silicon nanomembranes probed by ultrafast terahertz spectroscopy.
TL;DR: Observations combined with electrical and optical measurements strongly corroborate that the a-PZR effect originates from the carrier concentration changes via charge carrier trapping into strain-induced defect states.
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A facile method for the selective decoration of graphene defects based on a galvanic displacement reaction
Juree Hong,Jae Bok Lee,Sanggeun Lee,Jungmok Seo,Hyunsoo Lee,Jeong Young Park,Jong Hyun Ahn,Tae Il Seo,Taeyoon Lee,Han-Bo-Ram Lee +9 more
TL;DR: Choi et al. as discussed by the authors reported a simple and effective approach for enhancing the electrical properties of graphene by selective graphene-defect decoration with Pd nanoparticles (Pd NPs) using a wet-chemistry-based galvanic displacement reaction.
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Mobility enhancement of strained Si transistors by transfer printing on plastic substrates
TL;DR: Ahn et al. as mentioned in this paper proposed a transfer-process-based approach to reduce the number of defects in silicon and enabled devices to be transferred to plastic substrates to realize flexible devices.
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Damage-free transfer mechanics of 2-dimensional materials: competition between adhesion instability and tensile strain
Chan Kim,Yoon Min Ah,Bongkyun Jang,Hyeon-Don Kim,Jae-Hyun Kim,Anh Tuan Hoang,Jong Hyun Ahn,Jung Hyun June,Hak-Joo Lee,Kwang-Seop Kim +9 more
TL;DR: In this article, the authors investigated the damage of CVD-grown graphene (Gr) and MoS2 during a roll-based transfer process and identified two different damage mechanisms, i.e., instability-induced damage and tensile strain induced damage.