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Jong Hyun Ahn

Bio: Jong Hyun Ahn is an academic researcher from Yonsei University. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 74, co-authored 287 publications receiving 39786 citations. Previous affiliations of Jong Hyun Ahn include National University of Singapore & University of Illinois at Urbana–Champaign.


Papers
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Journal ArticleDOI
TL;DR: Lee et al. as mentioned in this paper developed a flexible graphene-based multichannel electrode array for electrocorticography (ECoG) recording, which enabled them to assess cortical maps in a time and labor-efficient manner.
Abstract: Cortical maps, which are indicative of cognitive status, are shaped by the organism’s experience. Previous mapping tools, such as penetrating electrodes and imaging techniques, are limited in their ability to be used to assess high-resolution brain maps largely owing to their invasiveness and poor spatiotemporal resolution, respectively. In this study, we developed a flexible graphene-based multichannel electrode array for electrocorticography (ECoG) recording, which enabled us to assess cortical maps in a time- and labor-efficient manner. The flexible electrode array, formed by chemical vapor deposition (CVD)-grown graphene, provided low impedance and electrical noise because a good interface between the graphene and brain tissue was created, which improved the detectability of neural signals. Furthermore, cortical map remodeling was induced upon electrical stimulation at the cortical surface through a subset of graphene spots. This result demonstrated the macroscale plasticity of cortical maps, suggesting perceptual enhancement via electrical rehabilitation at the cortical surface. The spatial organization of neural networks representing sensorimotor behavior and cognition has been mapped by flexible devices placed on the cortex, the outer layer of the brain. Sensory messages from each part of the body are processed in a specific area in the brain and maps of the cortex can help understand these areas. A person’s cortical map is shaped by their early development and experiences. Study of such maps can help identify and treat sensory disorders. Existing techniques for brain mapping require placement of penetrating electrodes which is time-consuming and risks brain damage. Minseok Lee from City University of Hong Kong and colleagues made arrays of electrodes using graphene membranes and constructed sensory maps of rats and mice by placing these arrays directly on the cortical surface. The timely and continuous measurement of cortical maps is required for studying the nature and plasticity of brain maps. In this work, we developed the multichannel graphene array that enables high-resolution brain mapping, facilitating rapid and repetitive assessments of brain maps. The advanced graphene array with intervening thru-hole enables large-scale mapping simultaneously in the surface and deep of cortical areas, also improving conformality for better detection of electrocorticography signals. In a subset of the graphene array, cortical surface stimulation can remodel cortical maps, therein enhancing cortical plasticity. This technology provides potential therapeutic applications for various brain disorders by correcting brain maps.

7 citations

Journal ArticleDOI
TL;DR: In this paper, the evolution and reduction of surface roughness during the high-speed chemical dry thinning process of Si wafers were investigated, and the results indicated that the high speed chemical dry thawing process using F radicals and directly injected NO/Ar gases can be applied.
Abstract: In this study, the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers were investigated. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar gas, together with NO gas, decreased the root mean square surface roughness of the thinned Si wafer significantly. The process regime for the enhancement of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rates as high as 22.8 μm/min and root-mean-squared surface roughnesses as small as 0.75 nm could be obtained. The results indicate that the high-speed chemical dry thinning process using F radicals and directly injected NO/Ar gases can be applied...

7 citations

Journal ArticleDOI
01 Nov 2014-Carbon
TL;DR: In this article, a low-temperature solution method was proposed for the site-selective growth of ZnO nanorods and Au nanoparticles by making use of the wettability contrast of a graphene/graphene oxide (G/GO) template.

7 citations

Journal ArticleDOI
TL;DR: In this article, the authors present recent advances in Si NM technology that exhibit functional features different from the bulk materials and discuss the opportunities and current challenges related to this field, as well as discuss the current challenges in this field.
Abstract: Silicon (Si) has widely been used as an essential material in the modern semiconductor industry. Recently, new attempts have been actively made to apply Si to a variety of fields such as flexible electronic devices and biosensors by manufacturing Si nanomembranes (NMs) having nanometer thickness. In particular, as the thickness of Si is reduced to a nanometer scale, its mechanical, electrical, and optical properties differ from that of its bulk form, which provides opportunities for the development of new conceptual devices. In this review, we present recent advances in Si NM technology that exhibit functional features different from the bulk materials. In addition, we discuss the opportunities and current challenges related to this field.

6 citations


Cited by
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01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations

28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations

Journal ArticleDOI
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

13,348 citations