Author
Jordi Suñé
Other affiliations: Rovira i Virgili University, IBM, Spanish National Research Council ...read more
Bio: Jordi Suñé is an academic researcher from Autonomous University of Barcelona. The author has contributed to research in topics: Time-dependent gate oxide breakdown & Quantum tunnelling. The author has an hindex of 41, co-authored 284 publications receiving 6345 citations. Previous affiliations of Jordi Suñé include Rovira i Virgili University & IBM.
Papers published on a yearly basis
Papers
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Soochow University (Suzhou)1, Stanford University2, Polytechnic University of Milan3, University of California, Santa Barbara4, University of California, Los Angeles5, University of Modena and Reggio Emilia6, University of Massachusetts Amherst7, Katholieke Universiteit Leuven8, Peking University9, University College London10, National Chiao Tung University11, University of Texas at Austin12, IBM13, University of Granada14, Autonomous University of Barcelona15, Singapore University of Technology and Design16, East China Normal University17, University of Michigan18, Liverpool John Moores University19, Tsinghua University20, Chinese Academy of Sciences21, Technische Universität München22, RWTH Aachen University23
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Abstract: Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
441 citations
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TL;DR: In this article, a continuous analytic currentvoltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs is presented.
Abstract: We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages.
266 citations
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TL;DR: In this paper, a cell-based approach to the modeling of the oxide breakdown statistics is presented, which has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results.
Abstract: A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
256 citations
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TL;DR: In this article, a new model to describe the breakdown statistics of thin SiO2 films is presented, and the obtained distribution of failures has been found to provide very good fits of the experimental statistical data that correspond to both constant-current and constant-voltage stress experiments.
240 citations
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TL;DR: In this paper, the authors suggest that the reset occurs in two phases: a progressive narrowing of the conducting filament to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission.
Abstract: Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance.
154 citations
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3,248 citations
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IBM1
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.
2,680 citations
01 Jan 2016
TL;DR: The electronic transport in mesoscopic systems is universally compatible with any devices to read, and is available in the book collection an online access to it is set as public so you can get it instantly.
Abstract: Thank you very much for reading electronic transport in mesoscopic systems. Maybe you have knowledge that, people have look numerous times for their favorite readings like this electronic transport in mesoscopic systems, but end up in harmful downloads. Rather than reading a good book with a cup of tea in the afternoon, instead they juggled with some harmful bugs inside their computer. electronic transport in mesoscopic systems is available in our book collection an online access to it is set as public so you can get it instantly. Our book servers spans in multiple locations, allowing you to get the most less latency time to download any of our books like this one. Merely said, the electronic transport in mesoscopic systems is universally compatible with any devices to read.
1,220 citations
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TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.
Abstract: This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs
1,129 citations
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IBM1
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
Abstract: Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 /spl Aring/) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 /spl Aring/ before the chip standby power becomes excessive due to tunneling currents,.
784 citations