Jos E. M. Haverkort

Bio: Jos E. M. Haverkort is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum dot. The author has an hindex of 22, co-authored 101 publications receiving 1901 citations. Previous affiliations of Jos E. M. Haverkort include Leiden University.

Position-controlled [100] InP nanowire arrays

Abstract: We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal1 of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades2–6. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III–V semiconductors. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. Our experimental findings are in excellent quantitative agreement with ab initio theory. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies. A hexagonal (rather than cubic) alloy of silicon and germanium that has a direct (rather than indirect) bandgap emits light efficiently across a range of wavelengths, enabling electronic and optoelectronic functionalities to be combined on a single chip.

High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium–Tin–Oxide Mie Scatterers

Abstract: Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm2 under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III–V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength...

Carrier capture into a semiconductor quantum well.

Abstract: We experimentally observed an oscillating carrier capture time as a function of quantum well thickness. The capture times were obtained in a separate confinement quantum well structure by subpicosecond rise time measurements of the quantum well luminescence as well as by pump-probe correlation measurements of the population decay in the barrier layer. Both experimental techniques yield an oscillating capture time between 3 and 20 ps, in excellent agreement with the theoretical predictions. In a classical picture, our results correspond to a local capture time oscillating between 0.1 and 1.8 ps. Furthermore, the dependence of the capture time on the excitation energy is analyzed and the time-dependent position of the quasi-Fermi-level in the barrier layer is tracked experimentally. We find that the carrier capture time is very sensitive to the detailed structure parameters as well as to the carrier distribution in the barrier. Carrier capture is found to be an ambipolar process in which the oscillations of the observed capture times are due to the quantum-mechanical oscillation of the electron wave-function overlap above the well. Finally, electron capture is demonstrated to be dominated by LO-phonon emission.

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.

CO2 photo-reduction: insights into CO2 activation and reaction on surfaces of photocatalysts

Abstract: Large amounts of anthropogenic CO2 emissions associated with increased fossil fuel consumption have led to global warming and an energy crisis. The photocatalytic reduction of CO2 into solar fuels such as methane or methanol is believed to be one of the best methods to address these two problems. In addition to light harvesting and charge separation, the adsorption/activation and reduction of CO2 on the surface of heterogeneous catalysts remain a scientifically critical challenge, which greatly limits the overall photoconversion efficiency and selectivity of CO2 reduction. This review describes recent advances in the fundamental understanding of CO2 photoreduction on the surface of heterogeneous catalysts and particularly provides an overview of enhancing the adsorption/activation of CO2 molecules. The reaction mechanism and pathways of CO2 reduction as well as their dependent factors are also analyzed and discussed, which is expected to enable an increase in the overall efficiency of CO2 reduction through minimizing the reaction barriers and controlling the selectivity towards the desired products. The challenges and perspectives of CO2 photoreduction over heterogeneous catalysts are presented as well.

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Abstract: Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.

Theory of the linear and nonlinear optical properties of semiconductor microcrystallites

Abstract: We analyze theoretically the optical properties of ideal semiconductor crystallites so small that they show quantum confinement in all three dimensions [quantum dots (QD's)]. In the limit of a QD much smaller than the bulk exciton size, the linear spectrum will be a series of lines, and we consider the phonon broadening of these lines. The lowest interband transition will saturate like a two-level system, without exchange and Coulomb screening. Depending on the broadening, the absorption and the changes in absorption and refractive index resulting from saturation can become very large, and the local-field effects can become so strong as to give optical bistability without external feedback. The small QD limit is more readily achieved with narrow-band-gap semiconductors.