scispace - formally typeset
Search or ask a question
Author

Jose A. Garrido

Bio: Jose A. Garrido is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Diamond & Graphene. The author has an hindex of 47, co-authored 199 publications receiving 9431 citations. Previous affiliations of Jose A. Garrido include Free University of Berlin & Technische Universität München.


Papers
More filters
Journal ArticleDOI
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Abstract: We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

2,560 citations

Journal ArticleDOI
TL;DR: It is shown that proteins can be attached covalently to nanocrystalline diamond thin films, and, although the biomolecules are immobilized at the surface, they are still fully functional and active.
Abstract: Diamond exhibits several special properties, for example good biocompatibility and a large electrochemical potential window, that make it particularly suitable for biofunctionalization and biosensing. Here we show that proteins can be attached covalently to nanocrystalline diamond thin films. Moreover, we show that, although the biomolecules are immobilized at the surface, they are still fully functional and active. Hydrogen-terminated nanocrystalline diamond films were modified by using a photochemical process to generate a surface layer of amino groups, to which proteins were covalently attached. We used green fluorescent protein to reveal the successful coupling directly. After functionalization of nanocrystalline diamond electrodes with the enzyme catalase, a direct electron transfer between the enzyme's redox centre and the diamond electrode was detected. Moreover, the modified electrode was found to be sensitive to hydrogen peroxide. Because of its dual role as a substrate for biofunctionalization and as an electrode, nanocrystalline diamond is a very promising candidate for future biosensor applications.

496 citations

DOI
Claudia Backes1, Claudia Backes2, Amr M. Abdelkader3, Concepción Alonso4, Amandine Andrieux-Ledier5, Raul Arenal6, Raul Arenal7, Jon Azpeitia7, Nilanthy Balakrishnan8, Luca Banszerus9, Julien Barjon5, Ruben Bartali10, Sebastiano Bellani11, Claire Berger12, Claire Berger13, Reinhard Berger14, M.M. Bernal Ortega15, Carlo Bernard16, Peter H. Beton8, André Beyer17, Alberto Bianco18, Peter Bøggild19, Francesco Bonaccorso11, Gabriela Borin Barin20, Cristina Botas, Rebeca A. Bueno7, Daniel Carriazo21, Andres Castellanos-Gomez7, Meganne Christian, Artur Ciesielski18, Tymoteusz Ciuk, Matthew T. Cole, Jonathan N. Coleman1, Camilla Coletti11, Luigi Crema10, Huanyao Cun16, Daniela Dasler22, Domenico De Fazio3, Noel Díez, Simon Drieschner23, Georg S. Duesberg24, Roman Fasel20, Roman Fasel25, Xinliang Feng14, Alberto Fina15, Stiven Forti11, Costas Galiotis26, Costas Galiotis27, Giovanni Garberoglio28, Jorge M. Garcia7, Jose A. Garrido, Marco Gibertini29, Armin Gölzhäuser17, Julio Gómez, Thomas Greber16, Frank Hauke22, Adrian Hemmi16, Irene Hernández-Rodríguez7, Andreas Hirsch22, Stephen A. Hodge3, Yves Huttel7, Peter Uhd Jepsen19, I. Jimenez7, Ute Kaiser30, Tommi Kaplas31, HoKwon Kim29, Andras Kis29, Konstantinos Papagelis32, Konstantinos Papagelis26, Kostas Kostarelos33, Aleksandra Krajewska34, Kangho Lee24, Changfeng Li35, Harri Lipsanen35, Andrea Liscio, Martin R. Lohe14, Annick Loiseau5, Lucia Lombardi3, María Francisca López7, Oliver Martin22, Cristina Martín36, Lidia Martínez7, José A. Martín-Gago7, José I. Martínez7, Nicola Marzari29, Alvaro Mayoral6, Alvaro Mayoral37, John B. McManus1, Manuela Melucci, Javier Méndez7, Cesar Merino, Pablo Merino7, Andreas Meyer22, Elisa Miniussi16, Vaidotas Miseikis11, Neeraj Mishra11, Vittorio Morandi, Carmen Munuera7, Roberto Muñoz7, Hugo Nolan1, Luca Ortolani, A. K. Ott38, A. K. Ott3, Irene Palacio7, Vincenzo Palermo39, John Parthenios26, Iwona Pasternak40, Amalia Patanè8, Maurizio Prato41, Maurizio Prato21, Henri Prevost5, Vladimir Prudkovskiy12, Nicola M. Pugno42, Nicola M. Pugno43, Nicola M. Pugno44, Teófilo Rojo45, Antonio Rossi11, Pascal Ruffieux20, Paolo Samorì18, Léonard Schué5, Eki J. Setijadi10, Thomas Seyller46, Giorgio Speranza10, Christoph Stampfer9, I. Stenger5, Wlodek Strupinski40, Yuri Svirko31, Simone Taioli28, Simone Taioli47, Kenneth B. K. Teo, Matteo Testi10, Flavia Tomarchio3, Mauro Tortello15, Emanuele Treossi, Andrey Turchanin48, Ester Vázquez36, Elvira Villaro, Patrick Rebsdorf Whelan19, Zhenyuan Xia39, Rositza Yakimova, Sheng Yang14, G. Reza Yazdi, Chanyoung Yim24, Duhee Yoon3, Xianghui Zhang17, Xiaodong Zhuang14, Luigi Colombo49, Andrea C. Ferrari3, Mar García-Hernández7 
Trinity College, Dublin1, Heidelberg University2, University of Cambridge3, Autonomous University of Madrid4, Université Paris-Saclay5, University of Zaragoza6, Spanish National Research Council7, University of Nottingham8, RWTH Aachen University9, Kessler Foundation10, Istituto Italiano di Tecnologia11, University of Grenoble12, Georgia Institute of Technology13, Dresden University of Technology14, Polytechnic University of Turin15, University of Zurich16, Bielefeld University17, University of Strasbourg18, Technical University of Denmark19, Swiss Federal Laboratories for Materials Science and Technology20, Ikerbasque21, University of Erlangen-Nuremberg22, Technische Universität München23, Bundeswehr University Munich24, University of Bern25, Foundation for Research & Technology – Hellas26, University of Patras27, Center for Theoretical Studies, University of Miami28, École Polytechnique Fédérale de Lausanne29, University of Ulm30, University of Eastern Finland31, Aristotle University of Thessaloniki32, University of Manchester33, Polish Academy of Sciences34, Aalto University35, University of Castilla–La Mancha36, ShanghaiTech University37, University of Exeter38, Chalmers University of Technology39, Warsaw University of Technology40, University of Trieste41, Instituto Politécnico Nacional42, University of Trento43, Queen Mary University of London44, University of the Basque Country45, Chemnitz University of Technology46, Charles University in Prague47, University of Jena48, University of Texas at Dallas49
29 Jan 2020
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
Abstract: © 2020 The Author(s). We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resourceconsuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown.

330 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of surface termination on the charge state of nitrogen-vacancy (NV) centers, which have been ion-implanted a few nanometers below the surface of diamond, was investigated.
Abstract: We investigate the effect of surface termination on the charge state of nitrogen-vacancy (NV) centers, which have been ion-implanted a few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV${}^{\ensuremath{-}}$ centers convert into NV${}^{0}$ and, subsequently, into an unknown nonfluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the disappearance of NV${}^{\ensuremath{-}}$ in the vicinity of the hydrogen-terminated surface. The band bending, which induces a $p$-type surface conductive layer, leads to a depletion of electrons in the nitrogen-vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way to control the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to electrostatic control of the charge state with the use of an external gate electrode.

317 citations

Journal ArticleDOI
TL;DR: The development of the future generation of neuroprosthetic devices will require the advancement of novel solid-state sensors and actuators with a further improvement in the signal detection capability, a superior stability in biological environments, and a more suitable compatibility with living tissue.
Abstract: The development of the future generation of neuroprosthetic devices will require the advancement of novel solid-state sensors and actuators with a further improvement in the signal detection capability, a superior stability in biological environments, and a more suitable compatibility with living tissue. To date, interfacing of living cells and tissue with solid-state electronic devices has mainly been based on conventional silicon technology, in particular using Si metal-oxide-semiconductor fi eld-effect transistor (MOSFET) structures. [ 1 ] However, some of the drawbacks associated with this technology, such as its limited stability in aqueous environments [ 2 ] and a relatively high electrical noise, [ 3 ] have triggered the study of alternative materials and technologies. [ 4–11 ] In this respect, solution-gated fi eldeffect transistors (SGFETs) based on Si-nanowires, [ 4 ] AlGaN/ GaN heterostructures, [ 5 ] H-terminated diamond, [ 6 , 7 ] carbon nanotubes, [ 8 ] and, more recently, graphene [ 9–11 ] have been investigated as sensing devices. Among these materials, graphene is a particularly attractive candidate for bioelectronic applications, due to its remarkable physical and chemical properties. The extremely high charge carrier mobility in graphene [ 12 ] leads to a fi eld-effect transistor (FET) performance that is superior to most known semiconductors. [ 13 ] In addition, graphene is known to possess good chemical stability [ 14 ] and biocompatibility, [ 15 ] which is crucial not only for integration with biological systems, but also for the operation of fi eld-effect devices without a protective dielectric layer. Furthermore, the facile integration of graphene electronics with fl exible substrates paves the way for the development of fl exible devices, an important requirement for the design of biomedical implants with reduced tissue damage and scarring. [ 16 ] The use of graphene-based solutiongated fi eld-effect transistors (G-SGFETs) for the detection of cell signals has already been demonstrated on a fundamental level by using a single transistor on exfoliated graphene. [ 8 ] Despite this promising preliminary result, a successful graphene-based technology for the applications envisioned above requires the demonstration of arrays of graphene transistors, which can

228 citations


Cited by
More filters
Journal ArticleDOI
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

6,349 citations

Journal ArticleDOI
TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Abstract: Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...

3,628 citations

Journal ArticleDOI
TL;DR: An overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of differentTwo-dimensional crystals or of two- dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides are provided.
Abstract: Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications, with a strong focus on various photodetection platforms The versatility of these material systems enables their application in areas including ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges These detectors can be integrated with other photonic components based on the same material, as well as with silicon photonic and electronic technologies Here, we provide an overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of different two-dimensional crystals or of two-dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides

3,025 citations