Josh Goldberger

Bio: Josh Goldberger is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Nanowire & Nanorod. The author has an hindex of 4, co-authored 4 publications receiving 3619 citations. Previous affiliations of Josh Goldberger include University of California, Berkeley.

General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO Seeds

Abstract: A method for growing vertical ZnO nanowire arrays on arbitrary substrates using either gas-phase or solution-phase approaches is presented. A ∼10 nm-thick layer of textured ZnO nanocrystals with their c axes normal to the substrate is formed by the decomposition of zinc acetate at 200−350 °C to provide nucleation sites for vertical nanowire growth. The nanorod arrays made in solution have a rod diameter, length, density, and orientation desirable for use in ordered nanorod−polymer solar cells.

Nanoribbon waveguides for subwavelength photonics integration.

Abstract: Although the electrical integration of chemically synthesized nanowires has been achieved with lithography, optical integration, which promises high speeds and greater device versatility, remains unexplored We describe the properties and functions of individual crystalline oxide nanoribbons that act as subwavelength optical waveguides and assess their applicability as nanoscale photonic elements The length, flexibility, and strength of these structures enable their manipulation on surfaces, including the optical linking of nanoribbon waveguides and other nanowire elements to form networks and device components We demonstrate the assembly of ribbon waveguides with nanowire light sources and detectors as a first step toward building nanowire photonic circuitry

Silicon Vertically Integrated Nanowire Field Effect Transistors

Abstract: Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub-100-nm single-crystalline Si features. Herein we demonstrate the direct vertical integration of Si nanowire arrays into surrounding gate field effect transistors without the need for postgrowth nanowire assembly processes. The device fabrication allows Si nanowire channel diameters to be readily reduced to the 5-nm regime. These first-generation vertically integrated nanowire field effect transistors (VINFETs) exhibit electronic properties that are comparable to other horizontal nanowire field effect transistors (FETs) and may, with further optimization, compete with advanced solid-state nanoelectronic devices.

ZnO nanowire transistors.

Abstract: ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (Ie ) 13 ( 5c m 2 V -1 s -1 ), with carrier concentrations averaging 5.2 ( 2.5 10 17 cm -3 and on-off current ratios ranging from 10 5 to 10 7 . Four probe measurements show that the resistivity of the Ti/Au-ZnO contacts is 0.002-0.02 ?‚cm. The performance characteristics of the nanowire transistors are intimately tied to the presence and nature of adsorbed surface species. In addition, we describe a dynamic gate effect that seems to involve mobile surface charges and causes hysteresis in the transconductance, among other effects.

ZnO Nanowire UV Photodetectors with High Internal Gain

Abstract: ZnO nanowire (NW) visible-blind UV photodetectors with internal photoconductive gain as high as G ∼ 108 have been fabricated and characterized. The photoconduction mechanism in these devices has been elucidated by means of time-resolved measurements spanning a wide temporal domain, from 10-9 to 102 s, revealing the coexistence of fast (τ ∼ 20 ns) and slow (τ ∼ 10 s) components of the carrier relaxation dynamics. The extremely high photoconductive gain is attributed to the presence of oxygen-related hole-trap states at the NW surface, which prevents charge-carrier recombination and prolongs the photocarrier lifetime, as evidenced by the sensitivity of the photocurrrent to ambient conditions. Surprisingly, this mechanism appears to be effective even at the shortest time scale investigated of t < 1 ns. Despite the slow relaxation time, the extremely high internal gain of ZnO NW photodetectors results in gain-bandwidth products (GB) higher than ∼10 GHz. The high gain and low power consumption of NW photodetec...

A general strategy for nanocrystal synthesis

Abstract: New strategies for materials fabrication are of fundamental importance in the advancement of science and technology. Organometallic and other organic solution phase synthetic routes have enabled the synthesis of functional inorganic quantum dots or nanocrystals. These nanomaterials form the building blocks for new bottom-up approaches to materials assembly for a range of uses; such materials also receive attention because of their intrinsic size-dependent properties and resulting applications. Here we report a unified approach to the synthesis of a large variety of nanocrystals with different chemistries and properties and with low dispersity; these include noble metal, magnetic/dielectric, semiconducting, rare-earth fluorescent, biomedical, organic optoelectronic semiconducting and conducting polymer nanoparticles. This strategy is based on a general phase transfer and separation mechanism occurring at the interfaces of the liquid, solid and solution phases present during the synthesis. We believe our methodology provides a simple and convenient route to a variety of building blocks for assembling materials with novel structure and function in nanotechnology.

Growth of oriented single-crystalline rutile TiO(2) nanorods on transparent conducting substrates for dye-sensitized solar cells.

Abstract: Dye-sensitized solar cells (DSSCs) made from oriented, one-dimensional semiconductor nanostructures such as nanorods, nanowires, and nanotubes are receiving attention because direct connection of the point of photogeneration with the collection electrode using such structures may improve the cell performance. Specifically, oriented single-crystalline TiO2 nanorods or nanowires on a transparent conductive substrate would be most desirable, but achieving these structures has been limited by the availability of synthetic techniques. In this study, a facile, hydrothermal method was developed for the first time to grow oriented, single-crystalline rutile TiO2 nanorod films on transparent conductive fluorine-doped tin oxide (FTO) substrates. The diameter, length, and density of the nanorods could be varied by changing the growth parameters, such as growth time, growth temperature, initial reactant concentration, acidity, and additives. The epitaxial relation between the FTO substrate and rutile TiO2 with a smal...

Optical properties of ZnO nanostructures.

Abstract: We present a review of current research on the optical properties of ZnO nanostructures. We provide a brief introduction to different fabrication methods for various ZnO nanostructures and some general guidelines on how fabrication parameters (temperature, vapor-phase versus solution-phase deposition, etc.) affect their properties. A detailed discussion of photoluminescence, both in the UV region and in the visible spectral range, is provided. In addition, different gain (excitonic versus electron hole plasma) and feedback (random lasing versus individual nanostructures functioning as Fabry-Perot resonators) mechanisms for achieving stimulated emission are described. The factors affecting the achievement of stimulated emission are discussed, and the results of time-resolved studies of stimulated emission are summarized. Then, results of nonlinear optical studies, such as second-harmonic generation, are presented. Optical properties of doped ZnO nanostructures are also discussed, along with a concluding outlook for research into the optical properties of ZnO.