Joshua E. Goldberger

TL;DR: The properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications are highlighted.

TL;DR: A low-temperature, large-scale, and versatile synthetic process is needed before ZnO nanowire arrays find realistic applications in solar energy conversion, light emission, and other promising areas, and the ease of commercial scale-up is presented.

TL;DR: In this article, a review highlights the recent advances in the field, using work from this laboratory for illustration, and the understanding of general nanocrystal growth mechanisms serves as the foundation for the rational synthetic control of one-dimensional nanoscale building blocks, novel properties characterization and device fabrication based on nanowire building blocks.

TL;DR: In this article, the Langmuir−Blodgett technique was used to assemble monolayers (with areas over 20 cm2) of aligned silver nanowires that are ∼50 nm in diameter and 2−3 μm in length.

TL;DR: An ‘epitaxial casting’ approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30–200 nm and wall thicknesses of 5–50‬nm is reported, applicable to many other semiconductor systems.