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Joshua E. Goldberger

Bio: Joshua E. Goldberger is an academic researcher from Ohio State University. The author has contributed to research in topics: Germanane & Graphane. The author has an hindex of 38, co-authored 108 publications receiving 15073 citations. Previous affiliations of Joshua E. Goldberger include National Center for Electron Microscopy & Lawrence Berkeley National Laboratory.


Papers
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Patent
08 Apr 2004
TL;DR: Fluidic nanotubes as mentioned in this paper have been used for a variety of applications, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, and imaging devices.
Abstract: Fluidic nanotube devices (29) are described in which a hydrophilic, non-carbon nanotube (152), has its ends fluidly coupled to reservoirs (154 and 156). Source and drain contacts (164 and 166) are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules (160) so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor (132), wherein a tubular transistor (130) is formed. A gate electrode (146) can be attached between source (136) and drain (138) to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

153 citations

Journal ArticleDOI
TL;DR: By monitoring the transfer characteristics of the CrI3/graphene heterostructure over the course of degradation, it is shown that the aquachromium solution hole-dopes graphene.
Abstract: As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium tri-iodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging due to its extreme instability under ambient conditions. Here, we present Raman characterization of CrI3 and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA, and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing light exposure markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of the CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene.

138 citations

Patent
16 Aug 2006
TL;DR: In this article, the authors describe vertical integrated field effect transistor circuits and methods which are fabricated from Silicon, Germanium, or a combination of Silicon and Germanium based on nanowires grown in place on the substrate.
Abstract: Vertical integrated field effect transistor circuits and methods are described which are fabricated from Silicon, Germanium, or a combination Silicon and Germanium based on nanowires grown in place on the substrate. By way of example, vertical integrated transistors are formed from one or more nanowires which have been insulated, had a gate deposited thereon, and to which a drain is coupled to the exposed tips of one or more of the nanowires. The nanowires are preferably grown over a surface or according to a desired pattern in response to dispersing metal nanoclusters over the desired portions of the substrate. In one preferred implementation, SiCI4 is utilized as a gas phase precursor during the nanowire growth process. In place nanowire growth is also taught in conjunction with structures, such as trenches, while bridging forms of nanowires are also described.

97 citations

Journal ArticleDOI
TL;DR: Symmetric oligothiophene derivatives containing hydrogen bond forming segments create self-supporting organogels consisting of self-assembled 1D nanostructures at low concentrations.

96 citations

Patent
08 Dec 2003
TL;DR: In this paper, single-crystalline GaNotubes of materials with a non-layered crystal structure are described, and the resulting GaN nanotubes have inner diameters ranging from 30 nm to 200 nm and wall thickness between 5 and 50 nm.
Abstract: Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar “epitaxial-casting” approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

94 citations


Cited by
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Journal ArticleDOI
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

13,348 citations

Journal ArticleDOI
25 Jul 2013-Nature
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Abstract: Fabrication techniques developed for graphene research allow the disassembly of many layered crystals (so-called van der Waals materials) into individual atomic planes and their reassembly into designer heterostructures, which reveal new properties and phenomena. Andre Geim and Irina Grigorieva offer a forward-looking review of the potential of layering two-dimensional materials into novel heterostructures held together by weak van der Waals interactions. Dozens of these one-atom- or one-molecule-thick crystals are known. Graphene has already been well studied but others, such as monolayers of hexagonal boron nitride, MoS2, WSe2, graphane, fluorographene, mica and silicene are attracting increasing interest. There are many other monolayers yet to be examined of course, and the possibility of combining graphene with other crystals adds even further options, offering exciting new opportunities for scientific exploration and technological innovation. Research on graphene and other two-dimensional atomic crystals is intense and is likely to remain one of the leading topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first, already remarkably complex, such heterostructures (often referred to as ‘van der Waals’) have recently been fabricated and investigated, revealing unusual properties and new phenomena. Here we review this emerging research area and identify possible future directions. With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.

8,162 citations

Journal ArticleDOI
TL;DR: The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties are equally important.
Abstract: The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

6,852 citations

Journal ArticleDOI
TL;DR: This work introduces a version of the dye-sensitized cell in which the traditional nanoparticle film is replaced by a dense array of oriented, crystalline ZnO nanowires, which features a surface area up to one-fifth as large as a nanoparticle cell.
Abstract: Excitonic solar cells1—including organic, hybrid organic–inorganic and dye-sensitized cells (DSCs)—are promising devices for inexpensive, large-scale solar energy conversion. The DSC is currently the most efficient2 and stable3 excitonic photocell. Central to this device is a thick nanoparticle film that provides a large surface area for the adsorption of light-harvesting molecules. However, nanoparticle DSCs rely on trap-limited diffusion for electron transport, a slow mechanism that can limit device efficiency, especially at longer wavelengths. Here we introduce a version of the dye-sensitized cell in which the traditional nanoparticle film is replaced by a dense array of oriented, crystalline ZnO nanowires. The nanowire anode is synthesized by mild aqueous chemistry and features a surface area up to one-fifth as large as a nanoparticle cell. The direct electrical pathways provided by the nanowires ensure the rapid collection of carriers generated throughout the device, and a full Sun efficiency of 1.5% is demonstrated, limited primarily by the surface area of the nanowire array.

5,308 citations

Journal ArticleDOI
26 Mar 2013-ACS Nano
TL;DR: The properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications are highlighted.
Abstract: Graphene’s success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in...

4,123 citations