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Ju Hung Chao

Bio: Ju Hung Chao is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Electric field & Space charge. The author has an hindex of 5, co-authored 27 publications receiving 118 citations. Previous affiliations of Ju Hung Chao include Foundation University, Islamabad.

Papers
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Journal ArticleDOI
TL;DR: A three orders-of-magnitude increase in the speed of a space-charge-controlled KTN beam deflector achieved by eliminating the electric field-induced phase transition (EFIPT) in a nanodisordered KTN crystal is reported.
Abstract: In this paper, we report a three orders-of-magnitude increase in the speed of a space-charge-controlled KTN beam deflector achieved by eliminating the electric field-induced phase transition (EFIPT) in a nanodisordered KTN crystal. Previously, to maximize the electro-optic effect, a KTN beam deflector was operated at a temperature slightly above the Curie temperature. The electric field could cause the KTN to undergo a phase transition from the paraelectric phase to the ferroelectric phase at this temperature, which causes the deflector to operate in the linear electro-optic regime. Since the deflection angle of the deflector is proportional to the space charge distribution but not the magnitude of the applied electric field, the scanning speed of the beam deflector is limited by the electron mobility within the KTN crystal. To overcome this speed limitation caused by the EFIPT, we propose to operate the deflector at a temperature above the critical end point. This results in a significant increase in the scanning speed from the microsecond to nanosecond regime, which represents a major technological advance in the field of fast speed beam scanners. This can be highly beneficial for many applications including high-speed imaging, broadband optical communications, and ultrafast laser display and printing.

34 citations

Journal ArticleDOI
TL;DR: A dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals is reported by using the electric-field-enhanced permittivity to offer a wider deflection range and a lower driving voltage.
Abstract: Most applications of a ferroelectric-based electro-optic (EO) beam deflector have been limited by the high applied voltage. In this Letter, we report a dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals by using the electric-field-enhanced permittivity. Due to the existence of the electric-field-induced phase transition in relaxor ferroelectric materials, the dielectric permittivity can be substantially increased by the applied electric field at a certain temperature. Both the theoretical study and the experimental verifications on the enhanced beam deflection and EO effect in the case with the electric-field-induced high permittivity were conducted. The experimental results confirmed that there was a three-fold increase in the deflection angle, which represented a dramatic increase in the deflection angle. By offering a wider deflection range and a lower driving voltage, such a largely enhanced beam deflection is of great benefit to the KTN deflector.

26 citations

Journal ArticleDOI
TL;DR: In this paper, the electric field-induced phase transition in perovskite relaxor ferroelectric crystals has been studied using Raman spectroscopy, and it was shown that the intensity of the Raman spectrum of electric field induced phase transition is a function of temperature and thermal history.

24 citations

Journal ArticleDOI
TL;DR: This work provides an effective way for realizing multi-dimensional high-speed non-mechanical beam deflection, which can be very useful for a variety of applications, including high- speed 3D laser printing, high resolution high speed scanning imaging, and free space reconfigurable laser communications.
Abstract: In this paper, a high-speed non-mechanical two-dimensional KTN beam deflector is reported. The scanning mechanism is based on the combination of space charge controlled beam deflection and temperature gradient enabled beam deflection in a nanodisordered KTN crystal. Both theoretical analyses and experimental investigations are provided, which agree relatively well with each other. This work provides an effective way for realizing multi-dimensional high-speed non-mechanical beam deflection, which can be very useful for a variety of applications, including high-speed 3D laser printing, high resolution high speed scanning imaging, and free space reconfigurable laser communications.

20 citations

Journal ArticleDOI
TL;DR: An ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock- on time of high-gain GaAs PCSS, consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal.
Abstract: We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The high-fluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence long-lifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.

8 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, a 2-inch diagonal full-color active matrix display with pixel density of 120 pixels per inch (PPI) fabricated by ink-jet printing technique is presented.
Abstract: Making full-color active matrix display based on quantum dot light emitting diodes (AM-QLEDs) via ink-jet printing is attractive in display industry due to QLEDs’ wide color gamut and their potential manufacturing advantages of large screen size and low cost. The challenges for realizing AM-QLED display are how to achieve high quality films through ink-jet printing, multi-color patterning, electroluminescence (EL) color purity, and high efficiency. Herein, a 2-inch diagonal full-color AM-QLEDs display with pixel density of 120 pixels per inch (PPI) fabricated by ink-jet printing technique is presented. Driven by a metal oxide TFT (MOTFT) back-panel, the display exhibits a maximum brightness of 400 cd m−2, and a color gamut of 109% (NTSC 1931). The red, green, and blue (RGB) monochrome QLEDs passive matrix panels fabricated by ink-jet printing technique have a current efficiency (CE) of 2.5, 13.9, and 0.30 cd A−1, respectively. To the best of our knowledge, the efficiencies are the highest among passive matrix QLEDs panels made by ink-jet printing technique. The ink-jet printed QDs films show good thickness uniformity due to high viscosity and low volatility of the printable inks, and no cross-contamination between adjacent pixels resulting from the hydrophobic pixel defining layer.

57 citations

Journal ArticleDOI
TL;DR: Three state-of-the-art key optical technologies that enable fast z-focus modulation are reviewed, along with a discussion of the implications of the new developments in variable optical elements and their impact on technologically relevant applications.
Abstract: In this Review, we survey recent developments in the emerging field of high-speed variable-z-focus optical elements, which are driving important innovations in advanced imaging and materials processing applications. Three-dimensional biomedical imaging, high-throughput industrial inspection, advanced spectroscopies, and other optical characterization and materials modification methods have made great strides forward in recent years due to precise and rapid axial control of light. Three state-of-the-art key optical technologies that enable fast z-focus modulation are reviewed, along with a discussion of the implications of the new developments in variable optical elements and their impact on technologically relevant applications. Recent improvements of the operation speed of variable optical elements are reviewed with an emphasis on components with microsecond focus-varying response time.

55 citations

Journal ArticleDOI
TL;DR: This work observes the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice.
Abstract: As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium-lithium-tantalate-niobate with micrometric lattice constant, 10(4) times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies.

45 citations