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Juan Carlos Balda

Bio: Juan Carlos Balda is an academic researcher from University of Arkansas. The author has contributed to research in topics: Power module & Converters. The author has an hindex of 29, co-authored 180 publications receiving 3468 citations. Previous affiliations of Juan Carlos Balda include Clemson University & University of Arkansas at Little Rock.


Papers
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Proceedings ArticleDOI
20 Jun 2004
TL;DR: In this article, the authors proposed a simple algorithm that recalculates the width of each PWM pulse, preserving the ideal area, taking advantage of the fact that the dead times are not always necessary, but only when the load current changes its sign.
Abstract: The output voltage of PWM power inverters shows harmonic distortion due to several causes; the main ones are the modulation algorithm, nonlinearities due to the output filter, dead times, voltage drops across the switches and modulation of the dc bus voltage. The distortion is more evident when using low dc bus voltages. As a result, motors driven by these inverters have important torque pulsations. This work proposes to reduce the distortion produced by dead times and voltage drops across the switches, using a simple algorithm that recalculates the width of each PWM pulse, preserving the ideal area. The algorithm takes advantage of the fact that the dead times are not always necessary, but only when the load current changes its sign. By simulation, the THD was reduced from 18% to 0.29% in a single-phase inverter. The proposed algorithm only needs products and sums, so it is suitable for being implemented on a DSP with low processing load. Experimental results were obtained from a non-optimized laboratory prototype, showing a reduction of the THD from 17.9% to 0.59%.

15 citations

Proceedings ArticleDOI
01 Jan 2005
TL;DR: In this paper, the effect of liquid droplet impact on a 40 μm thick liquid film containing vapor bubble and the consequent heat removal is explained with a sequence of temperature vs. time contours.
Abstract: Spray cooling is a high flux heat removal technique considered for systems dissipating high power within small areas such as advanced lasers. Recently Selvam and Ponnappan (2004 & 2005) identified the importance of modeling heat transfer in a thin liquid film on a hot surface at the micro level and illustrated how this micro level modeling could help to improve the macro level spray cooling. The goal of this research is to advance the theoretical understanding of spray cooling to enable efficient system level hardware designs. Two-phase flow modeling is done using the level set method to identify the interface of vapor and liquid. The modifications made to the incompressible Navier-Stokes equations to consider surface tension and phase change are presented. The equations are solved using the finite difference method. The effect of liquid droplet impact on a 40 μm thick liquid film containing vapor bubble and the consequent heat removal is explained with a sequence of temperature vs. time contours. From that, the importance of fast transient conduction in the liquid film leading to high heat flux in a short time is illustrated. The optimum positioning of the droplet with respect to the vapor bubble for effective heat removal is also systematically investigated. This information is expected to help in proper positioning of the droplet in three-dimensional modeling.Copyright © 2005 by ASME

15 citations

Proceedings ArticleDOI
12 Nov 2012
TL;DR: This paper describes a 4 kV Silicon Carbide (SiC) fault current limiter that demonstrated the technologies' potential and offers several key advantages to grid-connected power electronics, such as smaller footprint, faster switching speeds, and simpler cooling systems.
Abstract: Due to increased demand and deployment of new technologies, such as electric vehicles, utilities face increasing fault currents in their systems. As a consequence protection devices must have higher ratings. Replacing existing infrastructure can prove expensive and complicated. Fault current limiters promise an upgrade solution that will mitigate the need for replacing existing breakers to keep fault currents within the ratings of existing protection equipment. SiC offers several key advantages to grid-connected power electronics, such as smaller footprint, faster switching speeds, and simpler cooling systems. This paper describes a 4 kV Silicon Carbide (SiC) fault current limiter that demonstrated the technologies' potential.1

15 citations

Proceedings ArticleDOI
12 Nov 2012
TL;DR: In this article, a 6.5kV wire-bondless power electronics module with double-sided cooling is proposed and evaluated, where a direct solder attachment is employed to minimize parasitic circuit elements and increase current handling capability as well as to enable a doublesided cooling capability with mechanical robustness.
Abstract: A 6.5kV, wire-bondless power electronics module with a double-sided cooling is proposed and evaluated. A direct solder attachment is employed to minimize parasitic circuit elements and increase current handling capability as well as to enable a double-sided cooling capability with mechanical robustness. Finite element simulations were performed to investigate the thermal performance, critical breakdown voltage and mechanical stresses of the power electronic module. The active devices in the proposed modules were demonstrated to withstand a 6.5kV breakdown voltage with a reasonable leakage current. The parasitic inductance is also modeled and compared between wire-bonded and wire-bondless power module. The mechanical and electrical performance of the power module agreed well with simulation results.

14 citations

Proceedings ArticleDOI
02 Apr 2007
TL;DR: A comparison of three-level half-bridge zero-voltage switching (ZVS) and zero- voltage zero-current switching (VZCS) converters and an approach to select the components of the system are presented.
Abstract: The paper presents a comparison of three-level half-bridge zero-voltage switching (ZVS) and zero-voltage zero-current switching (ZVZCS) converters. It also provides an approach to select the components of the system. Experimental results verify the presented theory.

14 citations


Cited by
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01 Sep 2010

2,148 citations

Journal ArticleDOI
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

1,648 citations

Journal ArticleDOI
TL;DR: In this paper, the dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit of high frequency-link (HFL) power conversion systems.
Abstract: High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.

1,306 citations

Journal ArticleDOI
TL;DR: In this paper, the authors comprehensively review and classify various step-up dc-dc converters based on their characteristics and voltage-boosting techniques, and discuss the advantages and disadvantages of these voltage boosting techniques and associated converters.
Abstract: DC–DC converters with voltage boost capability are widely used in a large number of power conversion applications, from fraction-of-volt to tens of thousands of volts at power levels from milliwatts to megawatts. The literature has reported on various voltage-boosting techniques, in which fundamental energy storing elements (inductors and capacitors) and/or transformers in conjunction with switch(es) and diode(s) are utilized in the circuit. These techniques include switched capacitor (charge pump), voltage multiplier, switched inductor/voltage lift, magnetic coupling, and multistage/-level, and each has its own merits and demerits depending on application, in terms of cost, complexity, power density, reliability, and efficiency. To meet the growing demand for such applications, new power converter topologies that use the above voltage-boosting techniques, as well as some active and passive components, are continuously being proposed. The permutations and combinations of the various voltage-boosting techniques with additional components in a circuit allow for numerous new topologies and configurations, which are often confusing and difficult to follow. Therefore, to present a clear picture on the general law and framework of the development of next-generation step-up dc–dc converters, this paper aims to comprehensively review and classify various step-up dc–dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage-boosting techniques and associated converters are discussed in detail. Finally, broad applications of dc–dc converters are presented and summarized with comparative study of different voltage-boosting techniques.

1,230 citations

Journal ArticleDOI
TL;DR: This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies.
Abstract: Energy storage systems (ESSs) are enabling technologies for well-established and new applications such as power peak shaving, electric vehicles, integration of renewable energies, etc. This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies. Special attention is given to the different applications, providing a deep description of the system and addressing the most suitable storage technology. The main objective of this paper is to introduce the subject and to give an updated reference to nonspecialist, academic, and engineers in the field of power electronics.

1,115 citations