http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

A Survey of Wide Bandgap Power Semiconductor Devices

High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.

Overview of Dual-Active-Bridge Isolated Bidirectional DC–DC Converter for High-Frequency-Link Power-Conversion System

DC–DC converters with voltage boost capability are widely used in a large number of power conversion applications, from fraction-of-volt to tens of thousands of volts at power levels from milliwatts to megawatts. The literature has reported on various voltage-boosting techniques, in which fundamental energy storing elements (inductors and capacitors) and/or transformers in conjunction with switch(es) and diode(s) are utilized in the circuit. These techniques include switched capacitor (charge pump), voltage multiplier, switched inductor/voltage lift, magnetic coupling, and multistage/-level, and each has its own merits and demerits depending on application, in terms of cost, complexity, power density, reliability, and efficiency. To meet the growing demand for such applications, new power converter topologies that use the above voltage-boosting techniques, as well as some active and passive components, are continuously being proposed. The permutations and combinations of the various voltage-boosting techniques with additional components in a circuit allow for numerous new topologies and configurations, which are often confusing and difficult to follow. Therefore, to present a clear picture on the general law and framework of the development of next-generation step-up dc–dc converters, this paper aims to comprehensively review and classify various step-up dc–dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage-boosting techniques and associated converters are discussed in detail. Finally, broad applications of dc–dc converters are presented and summarized with comparative study of different voltage-boosting techniques.

/pdf/step-up-dc-dc-converters-a-comprehensive-review-of-voltage-6dlytctzg2.pdf

Step-Up DC–DC Converters: A Comprehensive Review of Voltage-Boosting Techniques, Topologies, and Applications

Energy storage systems (ESSs) are enabling technologies for well-established and new applications such as power peak shaving, electric vehicles, integration of renewable energies, etc. This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies. Special attention is given to the different applications, providing a deep description of the system and addressing the most suitable storage technology. The main objective of this paper is to introduce the subject and to give an updated reference to nonspecialist, academic, and engineers in the field of power electronics.

Energy Storage Systems for Transport and Grid Applications

An optimal design of a 2-MW dc supply which has a variable output dc voltage range between 400 V and 1500 V and is intended for testing equipment under IEEE 1547 is presented in this paper. Trade-offs between size and system complexity must be taken into account because the main components (dc inductor, semiconductor switches, cooling system, etc.) of such a high power system are expensive and/or bulky. Several dc-dc converter topologies are considered and compared for the application and all the components in this design were selected based on current market availability. The 4-stage interleaved dc-dc converter topology is finally selected since it has a good performance to price ratio. The control algorithm based on the selected topology is illustrated and simulation results are presented and described. These simulations demonstrate that the proposed dc supply design provides an acceptable dc power source for testing distributed generation equipment under IEEE 1547 at relatively high power levels.

Topology, cost and efficiency comparisons of a 2 MW DC supply using interleaved DC-DC converter

The U.S. electric grid is moving down a path of modernization and SiC-based thyristor devices may play a role in that transformation. This paper reports two primary contributions - (a) accurate physics based modeling and characterization of a SiC p-type thyristor, and (b) developing and codifying a generalized parameter extraction strategy for the Lumped-Charge modeling method, making it feasible to apply this technique for any bipolar device - beyond the thyristor. The level-3 physics based model incorporating SiC material and device geometry is highly accurate, replicating device capacitances, lifetimes, and non-quasi-static effects present in the actual device. A 1 kV/36 A p-type SiC thyristor provided by Cree was used to validate the model. Special test jigs were also designed and used to fully characterize the dc and transient performance of the device, ensuring precise measurements and safety of the user.

The modeling and characterization of silicon carbide thyristors

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

The optimum design of a non-dissipative LC snubber for step-up flyback converters operating in DCM (Discontinuous Conduction Mode) is presented. Experimental results prove that the optimization of the snubber plays a key role when high efficiency is required. A flat efficiency response larger than 91% along a wide operating range with a peak of 92.2% was accomplished with a transformer having a 6% leakage inductance.

Designing an optimum non-dissipative LC snubber for step-up flyback converters in DCM

Solid-state fault current limiters (SSFCLs) offer a number of benefits when incorporated within transmission and distribution systems. SSFCLs can limit the magnitude of a fault current seen by a system using different methods, such as inserting a large impedance in the current path or controlling the voltage applied to the fault. However, these two methods can introduce a few problems when SSFCLs are used in a system along with other protection equipment such as protective relays and sensors. An experiment was designed and implemented to evaluate the behavior of the protective relays in a mimic distribution system with a SSFCL. This paper introduces the details of the experiment and the result shows that the distorted current and voltage waveforms resulting from the action of the SSFCL disturb the protective equipment.

Juan Carlos Balda

Papers

Topology, cost and efficiency comparisons of a 2 MW DC supply using interleaved DC-DC converter

The modeling and characterization of silicon carbide thyristors

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

Designing an optimum non-dissipative LC snubber for step-up flyback converters in DCM

Impact of solid-state fault current limiters on protection equipment in transmission and distribution systems