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Juan Carlos Balda

Bio: Juan Carlos Balda is an academic researcher from University of Arkansas. The author has contributed to research in topics: Power module & Converters. The author has an hindex of 29, co-authored 180 publications receiving 3468 citations. Previous affiliations of Juan Carlos Balda include Clemson University & University of Arkansas at Little Rock.


Papers
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Proceedings ArticleDOI
17 Jun 2001
TL;DR: In this paper, a simple method for designing switched reluctance motors (SRM) under multi-phase excitation using specific design coefficients (derived from the flux and MMF distributions for each SRM configuration), and taking into account the magnetic loading is presented.
Abstract: The paper presents a simple method for designing switched reluctance motors (SRM) under multi-phase excitation using specific design coefficients (derived from the flux and MMF distributions for each SRM configuration), and taking into account the magnetic loading. The torque and magnetic loading performances of various SRM configurations designed using the proposed method are verified through finite element analysis (FEA).

3 citations

Proceedings ArticleDOI
10 Oct 2021
TL;DR: In this article, a three-phase three-limb high-efficiency medium-voltage medium-frequency transformer with an integrated leakage layer using ribbon-based nanocrystalline cores for 3-phase grid-connected applications is presented.
Abstract: This paper presents the design of a three-phase three-limb high-efficiency medium-voltage medium-frequency transformer with an integrated leakage layer using ribbon-based nanocrystalline cores for three-phase grid-connected applications. The design methodology is based on a custom-core approach developed by a series of design equations that allow the user to select a design that best fits the transformer specifications. A 150kVA 10-kHz 5-kV-to-400-V three-phase three-limb transformer is designed to validate the proposed design method. In addition, a series of experimental characterisation tests are conducted to measure the performance of the design according do the theoretical performance.

3 citations

Proceedings ArticleDOI
21 Oct 2004
TL;DR: In this paper, the integration of three-phase brushless DC motors and advanced microelectronic packaging techniques into compact motor controllers is discussed, with the primary focus on the reduction of thermal resistance.
Abstract: This work focuses on technical barriers to the implementation of controllers for auxiliary electric motors for automotive applications. It addresses the integration of three-phase brushless DC motors and advanced microelectronic packaging techniques into compact motor controllers. The proposed packaging techniques are focused on thermal performance utilizing minimum supplemental cooling. The primary focus of this discussion is the reduction of thermal resistance by the elimination of interfaces between the power devices and the heat sink. The initial application of this work is targeted at variable speed compressors for 42 V vehicles.

3 citations

Proceedings ArticleDOI
17 May 2009
TL;DR: In this paper, three SiC thyristors were attached on a common direct bond copper substrate with a copper heat spreader to form a power module and series resistances were inserted to achieve a good matching of their on-state currents.
Abstract: The need for high-voltage power semiconductor devices in utility applications ranging from isolating faults within a quarter cycle and efficient use of renewal energy resources is rapidly growing. To this end, silicon carbide thyristor power modules were fabricated and characterized electrically. In particular, three SiC thyristors were attached on a common direct bond copper substrate with a copper heat spreader to form a power module. Series resistances were inserted to achieve a good matching of their on-state currents. Experimental results revealed that this power module offered good thermal matching for parallel operation.

3 citations

Proceedings ArticleDOI
12 Nov 2012
TL;DR: In this article, the authors developed a level-3 physics-based model that predicts on-state and switching behavior with high accuracy, and also incorporated temperature effects, and accurately predicts device performances from 25 °C to +175 °C. The measured data was used to validate the model's performance.
Abstract: Over the past decade Silicon carbide (SiC) power semiconductor devices have shown great promise for next generation power electronic applications. New intelligent systems that will require advanced power electronic circuitry range from electric vehicles to smart grid interfaces. Several devices have been developed for use in these power electronic circuits including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of a SiC p-type Gate Turn-off Thyristor (GTO) is presented in this paper. The developed model is a level-3 physics-based model that predicts on-state and switching behavior with high accuracy. The model also incorporates temperature effects, and accurately predicts device performances from 25 °C to +175 °C. Test configurations were designed to accurately characterize and test an 8 kV ptype SiC GTO provided by Cree. The measured data was used to validate the model's performance.

3 citations


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01 Sep 2010

2,148 citations

Journal ArticleDOI
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

1,648 citations

Journal ArticleDOI
TL;DR: In this paper, the dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit of high frequency-link (HFL) power conversion systems.
Abstract: High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.

1,306 citations

Journal ArticleDOI
TL;DR: In this paper, the authors comprehensively review and classify various step-up dc-dc converters based on their characteristics and voltage-boosting techniques, and discuss the advantages and disadvantages of these voltage boosting techniques and associated converters.
Abstract: DC–DC converters with voltage boost capability are widely used in a large number of power conversion applications, from fraction-of-volt to tens of thousands of volts at power levels from milliwatts to megawatts. The literature has reported on various voltage-boosting techniques, in which fundamental energy storing elements (inductors and capacitors) and/or transformers in conjunction with switch(es) and diode(s) are utilized in the circuit. These techniques include switched capacitor (charge pump), voltage multiplier, switched inductor/voltage lift, magnetic coupling, and multistage/-level, and each has its own merits and demerits depending on application, in terms of cost, complexity, power density, reliability, and efficiency. To meet the growing demand for such applications, new power converter topologies that use the above voltage-boosting techniques, as well as some active and passive components, are continuously being proposed. The permutations and combinations of the various voltage-boosting techniques with additional components in a circuit allow for numerous new topologies and configurations, which are often confusing and difficult to follow. Therefore, to present a clear picture on the general law and framework of the development of next-generation step-up dc–dc converters, this paper aims to comprehensively review and classify various step-up dc–dc converters based on their characteristics and voltage-boosting techniques. In addition, the advantages and disadvantages of these voltage-boosting techniques and associated converters are discussed in detail. Finally, broad applications of dc–dc converters are presented and summarized with comparative study of different voltage-boosting techniques.

1,230 citations

Journal ArticleDOI
TL;DR: This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies.
Abstract: Energy storage systems (ESSs) are enabling technologies for well-established and new applications such as power peak shaving, electric vehicles, integration of renewable energies, etc. This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies. Special attention is given to the different applications, providing a deep description of the system and addressing the most suitable storage technology. The main objective of this paper is to introduce the subject and to give an updated reference to nonspecialist, academic, and engineers in the field of power electronics.

1,115 citations