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Juan Carlos Balda

Researcher at University of Arkansas

Publications -  194
Citations -  3931

Juan Carlos Balda is an academic researcher from University of Arkansas. The author has contributed to research in topics: Power module & Converters. The author has an hindex of 29, co-authored 180 publications receiving 3468 citations. Previous affiliations of Juan Carlos Balda include Clemson University & University of Arkansas at Little Rock.

Papers
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Journal ArticleDOI

Power-quality monitoring of a PV generator

TL;DR: In this paper, a power quality study performed on a photovoltaic generator is presented, which includes measured waveforms, trends, a statistical analysis of the measurements and the results of a connection/disconnection test.
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Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

TL;DR: The authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor to demonstrate the suitability of the SiC devices for high-Temperature power converter applications.
Journal ArticleDOI

Stabilizing SSR oscillations with a shunt reactor controller for uncertain levels of series compensation

TL;DR: In this paper, the authors demonstrate how frequency-domain techniques based on I. Horowitz et al.'s (1986) quantitative feedback theory can be applied to the design of fixed-parameter controllers in power systems where the plant parameters have large uncertainties.
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A Variable Inductor Based LCL Filter for Large-Scale Microgrid Application

TL;DR: In this article, the authors proposed a variable filter inductor with three-time higher inductance at low currents compared to its inductance value at rated current, which not only reduces current harmonics under all operating conditions but also helps to stabilize the microgrid by inducing less LCL resonant propagation.
Proceedings ArticleDOI

Power Conversion with SiC Devices at Extremely High Ambient Temperatures

TL;DR: In this article, the capability of SiC devices for operation under extremely high ambient temperatures was evaluated in a DC-DC buck converter, and the experimental results showed that the device can operate at 450 degC, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures.