Utilization of AZO/Au/AZO multilayer electrodes instead of FTO for perovskite solar cells

Al3+/Ag1+ induced phase transformation of MnO2 nanoparticles from α to β and their enhanced electrical and photocatalytic properties

Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

Tin-doped indium oxide (ITO) transparent conducting electrodes are widely used across the display industry, and are currently the cornerstone of photovoltaic device developments, taking a substantial share in the manufacturing cost of large-area modules. However, cost and supply considerations are set to limit the extensive use of indium for optoelectronic device applications and, in turn, alternative transparent conducting oxide (TCO) materials are required. In this report, we show that aluminum-doped zinc oxide (AZO) thin films grown by atomic layer deposition (ALD) are sufficiently conductive and transparent to outperform ITO as the cathode in inverted polymer solar cells. Reference polymer solar cells made with atomic-layer-deposited AZO cathodes, PCE10 as the polymer donor and PC71BM as the fullerene acceptor (model systems), reach power conversion efficiencies of ca. 10% (compared to ca. 9% with ITO-coated glass), without compromising other figures of merit. These ALD-grown AZO electrodes are promising for a wide range of optoelectronic device applications relying on TCOs.

/pdf/atomic-layer-deposited-azo-outperforms-ito-in-high-1qgydvegb1.pdf

Atomic-layer-deposited AZO outperforms ITO in high-efficiency polymer solar cells

Vacuum ultraviolet (VUV) light plays an essential role across science and technology, from molecular spectroscopy to nanolithography and biomedical procedures. Realizing nanoscale devices for VUV light generation and control is critical for next-generation VUV sources and systems, but the scarcity of low-loss VUV materials creates a substantial challenge. We demonstrate a metalens that both generates—by second-harmonic generation—and simultaneously focuses the generated VUV light. The metalens consists of 150-nm-thick zinc oxide (ZnO) nanoresonators that convert 394 nm (~3.15 eV) light into focused 197-nm (~6.29 eV) radiation, producing a spot 1.7 μm in diameter with a 21-fold power density enhancement as compared to the wavefront at the metalens surface. The reported metalens is ultracompact and phase-matching free, allowing substantial streamlining of VUV system design and facilitating more advanced applications. This work provides a useful platform for developing low-loss VUV components and increasing the accessibility of the VUV regime.

https://www.science.org/doi/pdf/10.1126/sciadv.abn5644?download=true

Vacuum ultraviolet nonlinear metalens

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

/pdf/effects-of-al-doping-on-the-properties-of-zno-thin-films-m32y8rh99k.pdf

Juan Liu

Papers

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition