J
Juan Pablo Llinas
Researcher at University of California, Berkeley
Publications - 15
Citations - 1701
Juan Pablo Llinas is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Graphene nanoribbons & Graphene. The author has an hindex of 7, co-authored 13 publications receiving 1258 citations. Previous affiliations of Juan Pablo Llinas include Lawrence Berkeley National Laboratory & Sandia National Laboratories.
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Journal ArticleDOI
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai,Sujay B. Desai,Surabhi R. Madhvapathy,Surabhi R. Madhvapathy,Angada B. Sachid,Angada B. Sachid,Juan Pablo Llinas,Juan Pablo Llinas,Qingxiao Wang,Geun Ho Ahn,Geun Ho Ahn,Gregory Pitner,Moon J. Kim,Jeffrey Bokor,Jeffrey Bokor,Chenming Hu,H.-S. Philip Wong,Ali Javey,Ali Javey +18 more
TL;DR: Molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode are demonstrated, which exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106.
Journal ArticleDOI
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
Juan Pablo Llinas,Juan Pablo Llinas,Andrew Fairbrother,Gabriela Borin Barin,Wu Shi,Wu Shi,Kyunghoon Lee,Kyunghoon Lee,Shuang Wu,Shuang Wu,Byung Yong Choi,Byung Yong Choi,Rohit Braganza,Rohit Braganza,Jordan Lear,Nicholas Kau,Won-Woo Choi,Chen Chen,Zahra Pedramrazi,Tim Dumslaff,Akimitsu Narita,Xinliang Feng,Klaus Müllen,Felix R. Fischer,Felix R. Fischer,Alex Zettl,Alex Zettl,Pascal Ruffieux,Eli Yablonovitch,Eli Yablonovitch,Michael F. Crommie,Michael F. Crommie,Roman Fasel,Roman Fasel,Jeffrey Bokor,Jeffrey Bokor +35 more
TL;DR: In this paper, the authors used a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 105 on-off current ratio.
Journal ArticleDOI
Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons
Juan Pablo Llinas,Juan Pablo Llinas,Andrew Fairbrother,Gabriela Borin Barin,Wu Shi,Wu Shi,Kyunghoon Lee,Kyunghoon Lee,Shuang Wu,Shuang Wu,Byung Yong Choi,Byung Yong Choi,Rohit Braganza,Rohit Braganza,Jordan Lear,Nicholas Kau,Won-Woo Choi,Chen Chen,Zahra Pedramrazi,Tim Dumslaff,Akimitsu Narita,Xinliang Feng,Klaus Müllen,Felix R. Fischer,Felix R. Fischer,Alex Zettl,Alex Zettl,Pascal Ruffieux,Eli Yablonovitch,Eli Yablonovitch,Michael F. Crommie,Michael F. Crommie,Roman Fasel,Roman Fasel,Jeffrey Bokor,Jeffrey Bokor +35 more
TL;DR: Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps, so a bottom-up synthesis approach is used to fabricate 9- and 13-atom wide ribbons enabling short-channel transistors with 105 on-off current ratio.
Journal ArticleDOI
Thermal conductivity of chirality-sorted carbon nanotube networks
TL;DR: In this paper, the authors used electrical heating and infrared thermal imaging to simultaneously study thermal and electrical transport in chirality-sorted carbon nanotubes (SWNTs) networks.
Journal ArticleDOI
Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.
Gregory Pitner,Gage Hills,Juan Pablo Llinas,Karl-Magnus Persson,Rebecca Park,Jeffrey Bokor,Subhasish Mitra,H.-S. Philip Wong +7 more
TL;DR: This work investigates by experiments the contact resistance and statistical variation of room-temperature fabricated CNFET contacts down to 10 nm contact lengths, and analyzes the variation of RC in arrays of identical C NFETs along a single CNT of constant diameter to reveal contact-length-dependent RC variations become significant below 20 nm contact length.