Jui-Cheng Huang

Bio: Jui-Cheng Huang is an academic researcher from TSMC. The author has contributed to research in topics: ISFET & Biosensor. The author has an hindex of 5, co-authored 11 publications receiving 62 citations.

High performance dual-gate ISFET with non-ideal effect reduction schemes in a SOI-CMOS bioelectrical SoC

Abstract: A dual-gate ion-sensitive field-effect transistor (DGFET) with the back-side sensing structure implemented in a 0.18 μm SOI-CMOS SoC platform realizing high performance bioelectrical detection with non-ideal effect reduction is presented. Non-ideal effects of the conventional ISFET, such as time drift and hysteresis, are suppressed by the innovative scheme in DGFET using the bottom poly-gate (PG) transistor instead of the fluidic gate (FG) transistor for sensing. As a result, the signal-to-noise ratio (SNR) is improved by 155x, time drift is reduced by 53x, and hysteresis is reduced by 3.7x. For certain applications which require high sensitivity, a pulse-modulated biasing technique can be adopted to effectively reduce time drift with high pH sensitivity of 453 mV/pH which is ∼7.5x enhancement over the Nernst limit in the proposed DGFET.

Fet sensing cell and method of improving sensitivity of the same

Abstract: The present disclosure provides a device, such as a FET sensing cell, which includes a first dielectric layer over a substrate, an active layer over the first dielectric layer, a source region in the active layer, a drain region in the active layer, a channel region in the active layer situated between the source region and the drain region, a sensing film over the channel region, a second dielectric layer over the active layer, wherein an opening is formed in the second dielectric layer and the sensing film is located within the opening, a first electrode located within the second dielectric layer and a fluidic gate region located over the second dielectric layer and extending into the opening. The present disclosure also provides a method for improving the sensitivity of a device by adjusting a sensing value.

Semiconductor device and selective heating thereof

Abstract: One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array.

Integrated circuit device with adaptations for multiplexed biosensing

Abstract: A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.

Embedded temperature control system for a biosensor

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

Flexible potentiometric pH sensors for wearable systems

Abstract: There is a growing demand for developing wearable sensors that can non-invasively detect the signs of chronic diseases early on to possibly enable self-health management. Among these the flexible and stretchable electrochemical pH sensors are particularly important as the pH levels influence most chemical and biological reactions in materials, life and environmental sciences. In this review, we discuss the most recent developments in wearable electrochemical potentiometric pH sensors, covering the key topics such as (i) suitability of potentiometric pH sensors in wearable systems; (ii) designs of flexible potentiometric pH sensors, which may vary with target applications; (iii) materials for various components of the sensor such as substrates, reference and sensitive electrode; (iv) applications of flexible potentiometric pH sensors, and (v) the challenges relating to flexible potentiometric pH sensors.

Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors.

Abstract: Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor detection limit, which is inversely proportional to the signal-to-noise ratio (SNR). Here, we present a systematic experimental investigation of the SNR using ultrathin silicon transistors. Our sensors operate at low voltage and feature asymmetric front and back oxide capacitances with asymmetry factors of 1.4 and 2.3. We demonstrate that in the dual-gate configuration, the response of our bioFETs to the pH change increases proportional to the asymmetry factor and indeed exceeds the Nernst limit. Further, our results reveal that the noise amplitude also increases in proportion to the asymmetry factor. We establish that the commensurate increase of the noise amplitude originates from the intrinsic low-frequency characteristic of the sensor noise, dominated by nu...

Printable graphene BioFETs for DNA quantification in Lab-on-PCB microsystems

Abstract: Lab-on-Chip is a technology that aims to transform the Point-of-Care (PoC) diagnostics field; nonetheless a commercial production compatible technology is yet to be established. Lab-on-Printed Circuit Board (Lab-on-PCB) is currently considered as a promising candidate technology for cost-aware but simultaneously high specification applications, requiring multi-component microsystem implementations, due to its inherent compatibility with electronics and the long-standing industrial manufacturing basis. In this work, we demonstrate the first electrolyte gated field-effect transistor (FET) DNA biosensor implemented on commercially fabricated PCB in a planar layout. Graphene ink was drop-casted to form the transistor channel and PNA probes were immobilized on the graphene channel, enabling label-free DNA detection. It is shown that the sensor can selectively detect the complementary DNA sequence, following a fully inkjet-printing compatible manufacturing process. The results demonstrate the potential for the effortless integration of FET sensors into Lab-on-PCB diagnostic platforms, paving the way for even higher sensitivity quantification than the current Lab-on-PCB state-of-the-art of passive electrode electrochemical sensing. The substitution of such biosensors with our presented FET structures, promises further reduction of the time-to-result in microsystems combining sequential DNA amplification and detection modules to few minutes, since much fewer amplification cycles are required even for low-abundance nucleic acid targets.