Julian Duchaine

Bio: Julian Duchaine is an academic researcher. The author has contributed to research in topics: Ion implantation & Plasma-immersion ion implantation. The author has an hindex of 4, co-authored 19 publications receiving 65 citations.

Plasma doping of silicon fin structures

Abstract: Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. Recently it has become an attractive implant technique for multiple gate and FinFET devices, since the directionality of the conventional beam-line implant processes used to form the source and drain junctions in planar devices is not well suited for use on non-planar devices. In this paper, we investigate the use of plasma doping to dope the sidewalls of fins, with particular attention to the dopant uniformity and residual damage after anneal.

4H-SiC P + N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Abstract: This paper presents a study of 4H-SiC UV photodetectors based on p+n thin junctions. Two kinds of p+ layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5x10-1 A/W @ 330 nm).

Optimization of Etching/Deposition Phenomena for BF3 and B2H6 Plasma Doping using PULSION®

Abstract: Plasma doping has been accepted into semiconductor manufacturing for two low energy, high dose implant applications. The p‐type polysilicon counter‐doping and contact doping for DRAM devices can be carried out using BF3 or B2H6 precursor gas. The choice between these two precursors depends on the benefits and constraints of each one. The capability of the PULSION plasma doping tool to minimize these key constraints, the amount of silicon etching, enhanced oxidation, and/or boron deposition, has been studied and is reported in this paper.

Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX

Abstract: FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin's scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Abstract: Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Materials Science Forum

Abstract: Properties and Application of Geopolymers Vol. 841 (/MSF.841 /book) Development and Investigation of Materials Using Modern Techniques Vol. 840 (/MSF.840/book) Superplasticity in Advanced Materials ICSAM 2015 Vols. 838-839 (/MSF.838-839/book) 12th International Conference on High Speed Machining Vols. 836-837 (/MSF.836-837/book) Sintering Fundamentals II Vol. 835 (/MSF.835/book) Advanced Machining Technologies: Traditions and Innovations Vol. 834 (/MSF.834/book) Applied Materials and Technologies Vol. 833 (/MSF.833/book) Emerging Functional Materials: Book (/MSF.841/book) Papers (/MSF.841)

Miniaturization of CMOS.

Abstract: When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique

Abstract: In this letter, we report high-performance 4H-SiC separated absorption charge multiplication ultraviolet (UV) avalanche photodiodes (APDs) with a large active area (800- $\mu \text{m}$ diameter). For the first time, a variable-temperature photoresist reflow technique is presented to obtain very smooth sidewalls for positive beveled mesa, which is very useful for suppressing the reverse leakage and premature edge breakdown. At room temperature, the dark current of our fabricated large-area APD remains at ~1-pA level (0.2 nA/cm2) at low reverse bias voltage, and a high multiplication gain of over 106 is achieved. The peak responsivity at the wavelength of 274 nm reaches 0.18 A/W, corresponding to a maximum external quantum efficiency of 81.5% at unity gain. Moreover, an excellent UV/visible rejection ratio of more than 103 is obtained. To the best of our knowledge, this is the best result reported for visible-blind UV detectors based on the large-area 4H-SiC APDs.