Jun-Hui Yuan

Bio: Jun-Hui Yuan is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Monolayer & Band gap. The author has an hindex of 16, co-authored 55 publications receiving 865 citations. Previous affiliations of Jun-Hui Yuan include Wuhan University of Technology.

Lead‐Free Halide Rb2CuBr3 as Sensitive X‐Ray Scintillator

Abstract: Scintillators are widely utilized for radiation detections in many fields, such as nondestructive inspection, medical imaging, and space exploration. Lead halide perovskite scintillators have recently received extensive research attention owing to their tunable emission wavelength, low detection limit, and ease of fabrication. However, the low light yields toward X-ray irradiation and the lead toxicity of these perovskites severely restricts their practical application. A novel lead-free halide is presented, namely Rb2 CuBr3 , as a scintillator with exceptionally high light yield. Rb2 CuBr3 exhibits a 1D crystal structure and enjoys strong carrier confinement and near-unity photoluminescence quantum yield (98.6%) in violet emission. The high photoluminescence quantum yield combined with negligible self-absorption from self-trapped exciton emission and strong X-ray absorption capability enables a record high light yield of ≈91056 photons per MeV among perovskite and relative scintillators. Overall, Rb2 CuBr3 provides nontoxicity, high radioluminescence intensity, and good stability, thus laying good foundations for potential application in low-dose radiography.

Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging.

Abstract: X-ray detectors are broadly utilized in medical imaging and product inspection. Halide perovskites recently demonstrate excellent performance for direct X-ray detection. However, ionic migration causes large noise and baseline drift, limiting the detection and imaging performance. Here we largely eliminate the ionic migration in cesium silver bismuth bromide (Cs2AgBiBr6) polycrystalline wafers by introducing bismuth oxybromide (BiOBr) as heteroepitaxial passivation layers. Good lattice match between BiOBr and Cs2AgBiBr6 enables complete defect passivation and suppressed ionic migration. The detector hence achieves outstanding balanced performance with a signal drifting one order of magnitude lower than all previous studies, low noise (1/f noise free), a high sensitivity of 250 µC Gy air−1 cm–2, and a spatial resolution of 4.9 lp mm−1. The wafer area could be easily scaled up by the isostatic-pressing method, together with the heteroepitaxial passivation, strengthens the competitiveness of Cs2AgBiBr6-based X-ray detectors as next-generation X-ray imaging flat panels. Ionic migration degrades not only the characteristics of halide perovskite solar cells, but also those of perovskite X-ray detectors. Here Yang et al. employ heteroepitaxial BiOBr to passivate Cs2AgBiBr6 double perovskite, which suppresses ionic migration and obtain high performance X-ray detectors.

All-Inorganic Copper Halide as a Stable and Self-Absorption-Free X-ray Scintillator.

Abstract: Lead halide perovskites have recently shown great potential as X-ray scintillators; however, the toxicity of the lead element seriously restricts their applications. Herein we report a new lead-fre...

Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2

Abstract: Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Resistive switching materials for information processing

Abstract: The rapid increase in information in the big-data era calls for changes to information-processing paradigms, which, in turn, demand new circuit-building blocks to overcome the decreasing cost-effectiveness of transistor scaling and the intrinsic inefficiency of using transistors in non-von Neumann computing architectures. Accordingly, resistive switching materials (RSMs) based on different physical principles have emerged for memories that could enable energy-efficient and area-efficient in-memory computing. In this Review, we survey the four physical mechanisms that lead to such resistive switching: redox reactions, phase transitions, spin-polarized tunnelling and ferroelectric polarization. We discuss how these mechanisms equip RSMs with desirable properties for representation capability, switching speed and energy, reliability and device density. These properties are the key enablers of processing-in-memory platforms, with applications ranging from neuromorphic computing and general-purpose memcomputing to cybersecurity. Finally, we examine the device requirements for such systems based on RSMs and provide suggestions to address challenges in materials engineering, device optimization, system integration and algorithm design. Resistive switching materials enable novel, in-memory information processing, which may resolve the von Neumann bottleneck. This Review focuses on how the switching mechanisms and the resultant electrical properties lead to various computing applications.

Tuning the Structural and Optoelectronic Properties of Cs(2)AgBiBr(6)Double-Perovskite Single Crystals through Alkali-Metal Substitution

Abstract: Lead-free double perovskites have great potential as stable and nontoxic optoelectronic materials. Recently, Cs2 AgBiBr6 has emerged as a promising material, with suboptimal photon-to-charge carrier conversion efficiency, yet well suited for high-energy photon-detection applications. Here, the optoelectronic and structural properties of pure Cs2 AgBiBr6 and alkali-metal-substituted (Cs1- x Yx )2 AgBiBr6 (Y: Rb+ , K+ , Na+ ; x = 0.02) single crystals are investigated. Strikingly, alkali-substitution entails a tunability to the material system in its response to X-rays and structural properties that is most strongly revealed in Rb-substituted compounds whose X-ray sensitivity outperforms other double-perovskite-based devices reported. While the fundamental nature and magnitude of the bandgap remains unchanged, the alkali-substituted materials exhibit a threefold boost in their fundamental carrier recombination lifetime at room temperature. Moreover, an enhanced electron-acoustic phonon scattering is found compared to Cs2 AgBiBr6 . The study thus paves the way for employing cation substitution to tune the properties of double perovskites toward a new material platform for optoelectronics.