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Jun Lu

Bio: Jun Lu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Medicine & Materials science. The author has an hindex of 135, co-authored 1526 publications receiving 99767 citations. Previous affiliations of Jun Lu include Drexel University & Argonne National Laboratory.


Papers
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Journal ArticleDOI
19 Sep 2012-PLOS ONE
TL;DR: The results indicate that the NAc regulates sleep-wake behavior and mediates arousal effects of the midbrain dopamine system and stimulant modafinil.
Abstract: Background We have previously shown that modafinil promotes wakefulness via dopamine receptor D1 and D2 receptors; however, the locus where dopamine acts has not been identified. We proposed that the nucleus accumbens (NAc) that receives the ventral tegmental area dopamine inputs play an important role not only in reward and addiction but also in sleep-wake cycle and in mediating modafinil-induced arousal.

56 citations

Journal ArticleDOI
J. Hwang1, Eun Sang Choi1, H. D. Zhou1, Jun Lu1, Pedro Schlottmann1 
TL;DR: In this paper, the authors measured the dielectric constant and pyroelectric current of orthorhombic polycrystalline samples, and showed that the features associated with ferroelectric transitions at the antiferromagnetic transition temperature were associated with magnetoelectric transition temperature.
Abstract: We have measured the dielectric constant and the pyroelectric current of orthorhombic (space group $Pbam$) NdCrTiO${}_{5}$ polycrystalline samples. The dielectric constant and the pyroelectric current show features associated with ferroelectric transitions at the antiferromagnetic transition temperature (${T}_{N}$ $=$ 21 K). The effect of magnetic fields is to enhance the features almost linearly up to the maximum measured field (7 T) with a spontaneous polarization value of $\ensuremath{\sim}$3.5 $\ensuremath{\mu}$C/m${}^{2}$. Two possible scenarios, the linear magnetoelectric effect and multiferroicity (antiferromagnetism plus ferroelectricity), are discussed as possible explanations for the observations.

56 citations

Journal ArticleDOI
TL;DR: In this paper, the Burstein-Moss effect related photoluminescence (PL) blue-shift was observed as long as 15 nm in perovskite CsPbBr3 crystal.
Abstract: Electrochemical doping was used to dope lithium into perovskite CsPbBr3 crystal. Due to the doping, diamagnetic behavior was observed with a transition temperature (Tc) of 7.17 K. Burstein–Moss effect related photoluminescence (PL) blue-shift was observed as long as 15 nm. UV–vis-NIR spectra indicate that the absorption has been enhanced. The doped CsPbBr3 crystal generated 8 nA photocurrent, which is higher than the undoped CsPbBr3 crystal.

56 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate that 3.5% in-plane lattice mismatch between GaN epitaxial layers and SiC substrates can be accommodated without triggering extended defects over large areas using a grain-boundary-free AlN nucleation layer (NL).
Abstract: We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001) substrates can be accommodated without triggering extended defects over large areas using a grain-boundary-free AlN nucleation layer (NL). Defect formation in the initial epitaxial growth phase is thus significantly alleviated, confirmed by various characterization techniques. As a result, a high-quality 0.2-μm thin GaN layer can be grown on the AlN NL and directly serve as a channel layer in power devices, like high electron mobility transistors (HEMTs). The channel electrons exhibit a state-of-the-art mobility of >2000 cm2/V-s, in the AlGaN/GaN heterostructures without a conventional thick C- or Fe-doped buffer layer. The highly scaled transistor processed on the heterostructure with a nearly perfect GaN–SiC interface shows excellent DC and microwave performances. A peak RF power density of 5.8 W/mm was obtained at VDSQ = 40 V and a fundamental frequency of 30 GHz. Moreover, an unpassivated 0.2-μm GaN/AlN/SiC stack shows lateral and vertical breakdowns at 1.5 kV. Perfecting the GaN–SiC interface enables a GaN–SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC, which promises further advances in a wide spectrum of high-frequency and power electronics.

56 citations


Cited by
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Journal ArticleDOI
04 Mar 2011-Cell
TL;DR: Recognition of the widespread applicability of these concepts will increasingly affect the development of new means to treat human cancer.

51,099 citations

Journal ArticleDOI
TL;DR: The Gene Set Enrichment Analysis (GSEA) method as discussed by the authors focuses on gene sets, that is, groups of genes that share common biological function, chromosomal location, or regulation.
Abstract: Although genomewide RNA expression analysis has become a routine tool in biomedical research, extracting biological insight from such information remains a major challenge. Here, we describe a powerful analytical method called Gene Set Enrichment Analysis (GSEA) for interpreting gene expression data. The method derives its power by focusing on gene sets, that is, groups of genes that share common biological function, chromosomal location, or regulation. We demonstrate how GSEA yields insights into several cancer-related data sets, including leukemia and lung cancer. Notably, where single-gene analysis finds little similarity between two independent studies of patient survival in lung cancer, GSEA reveals many biological pathways in common. The GSEA method is embodied in a freely available software package, together with an initial database of 1,325 biologically defined gene sets.

34,830 citations

Journal ArticleDOI

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08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations