Junjie Li

Bio: Junjie Li is an academic researcher. The author has contributed to research in topics: Ohmic contact & Field-effect transistor. The author has an hindex of 1, co-authored 1 publications receiving 503 citations.

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Abstract: Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

Abstract: Graphene’s success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in...

High Performance Multilayer MoS2 Transistors with Scandium Contacts

Abstract: While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS2 flakes that are covered by a 15 nm Al2O3 film, high effective mobilities of 700 cm2/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a miscon...

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

Abstract: Despite recent progress in the synthesis and characterization of molybdenum disulphide, little is yet known about its microstructure. Using refined chemical vapour deposition synthesis, high-quality crystals of monolayer molybdenum disulphide have now been grown. Single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.

The valley Hall effect in MoS2 transistors

Abstract: Electrons in two-dimensional crystals with a honeycomb lattice structure possess a valley degree of freedom (DOF) in addition to charge and spin. These systems are predicted to exhibit an anomalous Hall effect whose sign depends on the valley index. Here, we report the observation of this so-called valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated with circularly polarized light, which preferentially excites electrons into a specific valley, causing a finite anomalous Hall voltage whose sign is controlled by the helicity of the light. No anomalous Hall effect is observed in bilayer devices, which have crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Abstract: Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm–10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 200–300 Ω μm at zero gate bias. Field-effect transistors (FETs) with 1T phase electrodes fabricated and tested in air exhibit mobility values of ~50 cm2 V−1 s−1, subthreshold swing values below 100 mV per decade, on/off ratios of >107, drive currents approaching ~100 μA μm−1, and excellent current saturation. The deposition of different metals has limited influence on the FET performance, suggesting that the 1T/2H interface controls carrier injection into the channel. An increased reproducibility of the electrical characteristics is also obtained with our strategy based on phase engineering of MoS2. Non-optimal electrical contacts can significantly limit the performance of MoS2-based thin-film transistors. Transformation of semiconducting MoS2 into its metallic phase is now shown as a viable strategy to decrease the metal–MoS2 contact resistance.