Juntao Li

TL;DR: In this article, the failure mechanism of commercial 1.2-kV SiC MOFSETs under repetitive short-circuit (SC) tests has been investigated, where relatively low stress defined as low bias voltage and short SC duration is imposed on the devices, eliminating the effect of gate oxide degradation and metal deterioration.

TL;DR: In this article, the long-term reliability of commercial 1.2-kV 4H-SiC mofset s under repetitive unclamped inductive switching stresses is evaluated experimentally.

TL;DR: In this paper, a novel silicon carbide (SiC) trench MOSFET with floating/grounded junction barrier-controlled gate structure (FJB-MOS) was presented and investigated utilizing Sentaurus TCAD simulations.

TL;DR: In this article, the performance of the three-phase ac-ac matrix converter (MC) utilizing the novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor (IGBT) as switch elements for the first time was investigated.

TL;DR: In this article, a multiple-ring-modulated junction termination extension (MRM-JTE) technology for large-area silicon carbide PiN rectifier rated at 4500 V is proposed and experimentally investigated using a standard two-zone JTE (TZ-jTE) process without extra process steps or masks.