Juo-Jung Hung

Bio: Juo-Jung Hung is an academic researcher from University of Michigan. The author has contributed to research in topics: Phase shift module & Frequency multiplier. The author has an hindex of 7, co-authored 7 publications receiving 400 citations.

Distributed 2- and 3-bit W-band MEMS phase shifters on glass substrates

Abstract: This paper presents state-of-the-art RF microelectromechanical (MEMS) phase shifters at 75-110 GHz based on the distributed microelectromechanical transmission-line (DMTL) concept. A 3-bit DMTL phase shifter, fabricated on a glass substrate using MEMS switches and coplanar-waveguide lines, results in an average loss of 2.7 dB at 78 GHz (0.9 dB/bit). The measured figure-of-merit performance is 93/spl deg//dB-100/spl deg//dB (equivalent to 0.9 dB/bit) of loss at 75-110 GHz. The associated phase error is /spl plusmn/3/spl deg/ (rms phase error is 1.56/spl deg/) and the reflection loss is below -10 dB over all eight states. A 2-bit phase shifter is also demonstrated with comparable performance to the 3-bit design. It is seen that the phase shifter can be accurately modeled using a combination of full-wave electromagnetic and microwave circuit analysis, thereby making the design quite easy up to 110 GHz. These results represent the best phase-shifter performance to date using any technology at W-band frequencies. Careful analysis indicates that the 75-110-GHz figure-of-merit performance becomes 150/spl deg//dB-200/spl deg//dB, and the 3-bit average insertion loss improves to 1.8-2.1 dB if the phase shifter is fabricated on quartz substrates.

High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers

Abstract: High-efficiency monolithic SiGe balanced frequency doublers have been developed for Ku- and Ka-band applications. A novel miniature second harmonic reflector is presented, and the impact of the parasitic inductor from emitter to ground is also explored to optimize the conversion efficiency of the doubler. The Ku-band design presents an output power of 5-6 dBm from 15.4-18 GHz for an input power of 1.5 dBm. DC power consumption is 28 mW and the corresponding power-added efficiency (PAE) is 9.2%. The Ka-band design demonstrates an output power of 10.5 dBm at 36 GHz for an input power of 6 dBm while consuming 114 mW of dc power, which results in a PAE of 6.4%. It also shows high spectral purity operation with the fundamental suppression of 35 dB. To our knowledge, these are the best results for active doublers using any technology

A 77 GHz SiGe sub-harmonic balanced mixer

Abstract: A novel SiGe 77 GHz sub-harmonic balanced mixer is presented with a goal to push the technology to its limit [SiGe2-RF transistor (f/sub T/=80 GHz)]. This new topology uses a compact input network not only to achieve high isolation between the LO and RF ports, but also to result in excellent 2LO-RF isolation. The measured results demonstrate a conversion gain of 0.7 dB at 77 GHz with an LO power of 10 dBm at 38 GHz, LO-RF isolation better than 30 dB, 2LO-RF isolation of 25 dB, and a P/sub 1dB/ of -8 dBm. The mixer core consumes 4.4 mA at 5 V. The circuit demonstrates that SiGe sub-harmonic mixers have comparable performance with GaAs designs, at a fraction of the cost.

Parallel-contact metal-contact RF-MEMS switches for high power applications

Abstract: Electrostatically-actuated metal-contact RF MEMS switches have been designed, fabricated and tested with an aim of handling moderately high RF power (hundreds of mW to 1 W). The design strategy is: (i) the development of a switch element having good metal contacts and reliability without stiction problems under moderate actuation voltage (50-60 V), and (ii) the reduction of RF current through each contact by arranging several mechanically-independent switch elements in parallel. The developed switch element is a relatively wide and thick cantilever having two contacts and should have a contact force of 70 /spl mu/N per each contact at an applied voltage of 60 V based on the simulation. The measured pull-down voltage of 40-50 V has been obtained. By placing several switch elements in parallel, the insertion loss can be greatly reduced, and a loss as low as 0.03 dB at 2 GHz is obtained for an 8-contact switch (i.e. 4 switch elements) with a corresponding isolation of 22 dB at 2 GHz.

A low-voltage high contact force RF-MEMS switch

Abstract: This paper describes a novel structure for an electro-static actuated RF-MEMS metal-contact switch which achieves low-voltage actuations. Using a cantilever and placing a pull-down electrode outside the contact dimples, the actuation voltage can be reduced greatly while keeping a high contact force and restoration force. The simulation results show that the novel design operates around 20 V and produces a contact force of >200 /spl mu/N per contact, and a restoration force of >115 /spl mu/N per contact. The measured actuation voltage is 20-30 V which is higher than the designed value, and is thought to be caused by stress induced deflection. The measured RF isolation is 29 dB (Cu=28 fF) and the measured insertion loss is 0.2 dB (Rs=2.1 /spl Omega/) at 2 GHz.

Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

Abstract: A 325-GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.

A Programmable Lens-Array Antenna With Monolithically Integrated MEMS Switches

Abstract: This paper describes a reconfigurable millimeter-wave lens-array antenna based on monolithically integrated microelectromechanical systems (MEMS) switches. This device is constructed as a planar array of 2-bit programmable MEMS antenna-filter-antenna (AFA) unit cells that are used to provide a 1-D programmable ldquoaperture transfer functionrdquo between the input and output wavefronts. The fully integrated device consists of 484 (22 times 22) AFA elements and 2420 switches. Switches, bias lines, antennas, and the rest of the RF structure are fabricated on two quartz wafers (epsivr = 3.8, tandelta = 0.002) that are subsequently stacked using adhesive bonding to form the tri-layer metal structure of the AFA array. The bonded structure also forms a package for the MEMS switches. This paper investigates the design and fabrication issues and presents the measured data related to yield and frequency response of this lens-array. It also characterizes the performance of this device as a steerable antenna. Measured results show that this lens-array can be used to steer the beam of a low gain horn antenna to plusmn40deg in either the E- or the H-plane. For the fabricated prototype, the yield is estimated to be 50% for the best region of the array, resulting in a relatively high insertion loss and sidelobe level.

RF MEMS switches: status of the technology

Abstract: This paper presents the latest accomplishments in RF MEMS switches, and at the same time, an assessment of their potential applications in defense and commercial systems. It is seen that RF MEMS devices offer spectacular performance at microwave frequencies, but suffer from reliability problems and the potential of relatively high-cost hermetic packaging. Still, this technology offers such tremendous advantages over GaAs and silicon switching devices that, in the author's opinion, it will find many applications in satellite, base-station and defense applications, particularly at high microwave frequencies.

A Fully Integrated 240-GHz Direct-Conversion Quadrature Transmitter and Receiver Chipset in SiGe Technology

Abstract: This paper presents a fully integrated direct-conversion quadrature transmitter and receiver chipset at 240 GHz. It is implemented in a 0.13- $\mu{\hbox{m}}$ SiGe bipolar-CMOS technology. A wideband frequency multiplier ( $\times$ 16) based local-oscillator (LO) signal source and a wideband on-chip antenna designed to be used with an external replaceable silicon lens makes this chipset suited for applications requiring fixed and tunable LO. The chipset is packaged in a low-cost FR4 printed circuit board resulting in a complete solution with compact form-factor. At 236 GHz, the effective-isotropic-radiated-power is 21.86 dBm and the minimum single-sideband noise figure is 15 dB. The usable RF bandwidth for this chipset is 65 GHz and the 6-dB bandwidth is 17 GHz. At the system level, we demonstrate a high data-rate communication system where an external modem is operated in its two IF-bandwidth modes (250 MHz and 1 GHz). For the quadrature phase-shift keying modulation scheme, the measured data rate is 2.73 Gb/s (modem 1-GHz IF) with bit-error rate of ${\hbox{10}}^{-9}$ for a 15-cm link. The estimated data rate over the 17-GHz RF bandwidth is, hence, 23.025 Gb/s. Also, higher order modulation schemes like 16 quadrature amplitude modulation (QAM) with a data rate of 0.677 Gb/s and 64-QAM with a data rate of 1.0154 Gb/s (modem 250-MHz IF) is demonstrated. A second application demonstrator is presented where the wide tunable RF bandwidth of the chipset is used for material characterization. It is used to characterize an FR4 material (DE104) over the 215–260-GHz range.

High-Precision D-Band FMCW-Radar Sensor Based on a Wideband SiGe-Transceiver MMIC

Abstract: In this paper, a miniaturized D-band frequency-modulated continuous-wave (FMCW) radar sensor with 48-GHz bandwidth (32.8%, 122-170 GHz) and a high measurement rate of > 1 kHz for multi-target vibration measurements is presented. The sensor is based on a SiGe transceiver monolithic microwave integrated circuit manufactured via Infineon's B7HF200 bipolar production technology with an fT of 170 GHz and fmax of 250 GHz. Gilbert cell, push-pull, and varactor-based doubler concepts on manufactured chips are compared, and the most promising signal source is embedded into a transceiver chip, which forms the main component of the presented radar sensor. The maximum output power of the system is ≈ -10 dBm and a phase noise of ≈ -80 dBc/Hz is achieved. Measurements are provided to demonstrate the sensor characteristics and show the promising results of FMCW radar in highest precision distance and multi-target vibration measurement applications. Due to the covered wide bandwidth, a range resolution of 5.88 mm is achieved ( -6-dB width, Tukey window). The sensor's distance measurement repeatability is 290 nm (65 nm with 10 × averaging and 0.5-m target distance), and the distance measurement accuracy is m for a target in 65-cm distance moving 1 cm. Additionally, vibration measurement results and range-Doppler plots for advanced multi-target applications are presented.