J
Jürgen Christen
Researcher at Otto-von-Guericke University Magdeburg
Publications - 306
Citations - 9282
Jürgen Christen is an academic researcher from Otto-von-Guericke University Magdeburg. The author has contributed to research in topics: Cathodoluminescence & Photoluminescence. The author has an hindex of 46, co-authored 300 publications receiving 8920 citations. Previous affiliations of Jürgen Christen include Arizona State University & University of Stuttgart.
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Journal ArticleDOI
Bound exciton and donor–acceptor pair recombinations in ZnO
Bruno K. Meyer,H. Alves,Detlev M. Hofmann,W. Kriegseis,D. Forster,Frank Bertram,Jürgen Christen,Axel Hoffmann,M. Straßburg,M. Dworzak,U. Haboeck,Anna V. Rodina +11 more
TL;DR: In this paper, the optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminecence (CL) measurements.
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Ultranarrow Luminescence Lines from Single Quantum Dots.
Marius Grundmann,Jürgen Christen,N. N. Ledentsov,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,U. Richter,Ulrich Gösele,J. Heydenreich,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov +14 more
TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.
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Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
TL;DR: In this paper, a review devoted to the problem of how optical and structural properties of quantum-well heterostructures can be correlated in detail, and how these properties may be connected with the parameters of the epitaxial growth process.
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Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
Th. Gruber,C. Kirchner,R. Kling,F. Reuss,Andreas Waag,Frank Bertram,D. Forster,Jürgen Christen,Matthias Schreck +8 more
TL;DR: In this article, structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor phase epitaxy were analyzed, and a narrowing of the fundamental band gap of up to 300 meV was observed.
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MOVPE growth of GaN on Si(1 1 1) substrates
Armin Dadgar,M. Poschenrieder,Jürgen Bläsing,O. Contreras,Frank Bertram,T. Riemann,A. Reiher,Mike Kunze,I. Daumiller,A. Krtschil,A. Diez,A. Kaluza,A. Modlich,Markus Kamp,Jürgen Christen,Fernando Ponce,Erhard Kohn,Alois Krost +17 more
TL;DR: In this paper, a reduction in dislocation density from 10 10 to 10 9 cm -2 is observed for LT-AIN interlayers which can be further improved using monolayer thick Si x N y in situ masking and subsequent lateral overgrowth.