J
Jurgen Michel
Researcher at Massachusetts Institute of Technology
Publications - 396
Citations - 17759
Jurgen Michel is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Silicon & Photonics. The author has an hindex of 60, co-authored 394 publications receiving 16577 citations. Previous affiliations of Jurgen Michel include Singapore–MIT alliance & California Institute of Technology.
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High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.
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A Dielectric Omnidirectional Reflector
Yoel Fink,Joshua N. Winn,Shanhui Fan,Chiping Chen,Jurgen Michel,John D. Joannopoulos,Edwin L. Thomas +6 more
TL;DR: A design criterion that permits truly omnidirectional reflectivity for all polarizations of incident light over a wide selectable range of frequencies was used in fabricating an all-dielectric omnid Directional reflector consisting of multilayer films.
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Ge-on-Si laser operating at room temperature.
TL;DR: What is believed to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device is reported.
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An electrically pumped germanium laser
Rodolfo Camacho-Aguilera,Yan Cai,Neil Patel,Jonathan T. Bessette,Marco Romagnoli,Lionel C. Kimerling,Jurgen Michel +6 more
TL;DR: Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.
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Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
Eugene A. Fitzgerald,Ya-Hong Xie,Martin L. Green,D. Brasen,Ahmet Refik Kortan,Jurgen Michel,Y. J. Mii,B. E. Weir +7 more
TL;DR: In this article, the authors have grown compositionally graded GexSi1−x layers on Si at 900 °C with both molecular beam epitaxy and rapid thermal chemical vapor deposition techniques.