K. Arstila

Bio: K. Arstila is an academic researcher from University of Helsinki. The author has contributed to research in topics: Cathodoluminescence & Ion. The author has an hindex of 2, co-authored 2 publications receiving 14 citations.

Achieving epitaxy and intense luminescence in Ge /Rb-implanted α-quartz

Abstract: The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of α-quartz, we studied double Ge∕Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic α-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1×1014–1×1016ions∕cm2 and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 1015 implanted Geions∕cm2, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.

Cathodoluminescence during epitaxy in Rb-ion irradiated α-quartz

Abstract: Implanting photoactive ions into quartz or silica is a simple and efficient way to tune the luminescence light used for various optoelectronic applications. However, such ion implantation damages or even destroys the crystalline order in quartz. We report here on cathodoluminescence of α-quartz after 175 keV Rb-ion implantation and epitaxial growth when annealing the samples in air or 18O2. In the cathodoluminescence spectra taken at room temperature, five bands were identified. In addition to three intrinsic bands at 2.40, 2.79, and 4.30 eV, which are related to the quartz and/or silica matrix, two strong violet sub-bands at 3.25 and 3.65 eV were observed, which appear to be strongly correlated with the presence of alkali ions and/or the degree of epitaxy of the matrix. Their properties and origin are discussed in relation to similar bands observed after Ba, Ge, and Na ion implantation.

Helium irradiation study on zircon

Abstract: Synthetic ZrSiO4 and (mildly to strongly radiation-damaged) natural zircon samples were irradiated with 8.8 MeV 4He2+ ions (fluences in the range 1 × 1013–5 × 1016 ions/cm2). For comparison, an additional irradiation experiment was done with 30 MeV 16O6+ ions (fluence 1 × 1015 ions/cm2). The light-ion irradiation resulted in the generation of new (synthetic ZrSiO4) or additional (mildly to strongly metamict natural samples) damage. The maximum extent of the damage is observed in a shallow depth range approximately 32–33 μm (8.8 MeV He) and ~12 μm (30 MeV O) below the sample surface, i.e. near the end of the ion trajectories. These depth values, and the observed damage distribution, correspond well to defect distribution patterns as predicted by Monte Carlo simulations. The irradiation damage is recognised from the notable broadening of Raman-active vibrational modes, lowered interference colours (i.e. decreased birefringence), and changes in the optical activity (i.e. luminescence emission). At very low damage levels, a broad-band yellow emission centre is generated whereas at elevated damage levels, this centre is suppressed and samples experience a general decrease in their emission intensity. Most remarkably, there is no indication of notable structural recovery in pre-damaged natural zircon as induced by the light-ion irradiation, which questions the relevance of alpha-assisted annealing of radiation damage in natural zircon.

Spontaneous formation of superconducting NiBi3 phase in Ni-Bi bilayer films

Abstract: We report the spontaneous formation of superconducting NiBi3 phase in thermally evaporated Ni-Bi bilayer films. High reaction-diffusion coefficient of Bi is believed to drive the formation of NiBi3 during the deposition of Bi on the Ni film. Cross sectional transmission electron microscopy and glancing incidence X-ray depth profiling confirmed the presence of NiBi3 throughout the top Bi layer. Superconducting transition at ∼3.9 K, close to the bulk value, was confirmed by transport and magnetization measurements. The bilayers were irradiated with varying fluence of 100 MeV Au ions to study the robustness of superconducting order in presence of large concentration of defects. Superconducting parameters of NiBi3, such as transition temperature and upper critical field, remained unchanged upto an ion dose of 1 × 1014 ions/cm2. The diffusive formation of NiBi3 in Ni opens the possibility of studying superconducting proximity effect at a truly clean superconductor-ferromagnet interface.

Luminescence of ion-irradiated α-quartz

Abstract: Optical functionality of materials used in devices is the basis of modern photonics. It depends on selected photoactive impurities or low-dimensional structures, which can be tailored by ion implantation. The present survey covers cathode-luminescence spectroscopy performed after Ge, Ba, Na, Rb and Cs ion implantation in α-quartz, in connection with dynamic, laser-induced and chemical epitaxy of the surface layers amorphized during the ion irradiation. The correlations, which emerged for various luminescence bands, ion species and thermal processing methods, allows one to classify the bands into ion-specific and intrinsic ones. The microstructural properties measured by ion beam analysis and transmission electron microscopy will be combined with the luminescence data, and the role of photoactive defects in quartz and nanoparticles of the implants will be discussed. The technologically most attractive case of double Rb/Ge implantation will be highlighted, which combines the achievement of full chemical epi...

Light-emitting defects and epitaxy in alkali-ion-implanted α quartz

Abstract: Light-emitting centers in alkali-ion-implanted α quartz have been investigated with respect to the solid phase epitaxial growth of the ion irradiation induced amorphous zone. Cathodoluminescence was studied under the conditions of chemical epitaxy in annealing the samples, implanted with 2.5×1016 50keV Na ions/cm2 or 175keV Rb ions/cm2, in O218 atmosphere in the temperature range of 673–1173K. In addition to the known intrinsic subbands at 2.40, 2.79, and 4.30eV, which previously were associated with specific defects in the silica matrix, a strong violet band at 3.65eV and a band at 3.25eV have been identified. Both are intimately correlated with the presence of the implanted alkali atoms and recrystallization process. With respect to the 3.25eV band reported in the literature, they are discussed to be correlated with the presence of nanoclusters in Si-enriched, and Ge- and Sn-implanted SiO2 structures.