Author
K. Barua
Bio: K. Barua is an academic researcher from Dibrugarh University. The author has contributed to research in topics: Space charge & Dielectric. The author has an hindex of 7, co-authored 12 publications receiving 139 citations.
Topics: Space charge, Dielectric, Temperature coefficient, Oxide, Capacitance
Papers
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TL;DR: In this article, the currentvoltage characteristics of vacuum-deposited CdTe films were studied as a function of film thickness (2500-13000 A) at various temperatures (0 −110°C).
Abstract: The current-voltage characteristics of vacuum-deposited CdTe films were studied as a function of film thickness (2500–13000 A) at various temperatures (0–110°C). The d.c. conduction mechanism was explained using a modified Poole-Frenkel equation.
35 citations
TL;DR: In this paper, the dielectric constant and the loss factor of Al/Er2O3/Al thin film capacitors were studied as functions of frequency (from 100 Hz to 20 kHz) and temperature (0-100°C).
Abstract: The dielectric constant and the loss factor tan δ of Al/Er2O3/Al thin film capacitors were studied as functions of frequency (from 100 Hz to 20 kHz) and temperature (0–100°C). The temperature coefficient of capacitance and percentage variation in capacitance at 24°C normalized at 1 kHz were also investigated.
22 citations
TL;DR: In this article, an investigation was undertaken to examine the conduction mechanism in polymethylmethacrylate (PMMA) films and the current was measured in Al/PMMA/Al capacitors in the voltage range 4-300 V.
Abstract: An investigation was undertaken to examine the conduction mechanism in polymethylmethacrylate (PMMA) films. The current was measured in Al/PMMA/Al capacitors in the voltage range 4–300 V.
18 citations
16 citations
TL;DR: The transverse Hall coefficient of thin monocrystalline films was derived from the recently presented bidimensional conduction model by introducing a term in the Boltzmann equation representing the effective mean free path as discussed by the authors.
Abstract: The transverse Hall coefficient of thin monocrystalline filmsRHF is derived from the recently presented bidimensional conduction model by introducing a term in the Boltzmann equation representing the effective mean free path. Numerical evaluations ofRHF show that the size effect inRHF is less marked than that in resistivity and is much more sensitive to grain-boundary scattering than it is to external-surface scattering. Good agreement with the results from the previous experiments of several authors is found.
12 citations
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840 citations
TL;DR: In this paper, X-ray diffraction analysis of vacuum-evaporated cadmium telluride (CdTe) films reveals that the structure of the films is polycrystalline in nature for the samples prepared at higher substrate temperatures.
Abstract: The X-ray diffraction analysis of vacuum-evaporated cadmium telluride (CdTe) films reveals that the structure of the films is polycrystalline in nature for the samples prepared at higher substrate temperatures. The crystallite size ( D ), dislocation density ( δ ) and strain ( e ) were calculated. The composition analysis was made by the energy dispersive X-ray analysis. It confirmed the equal distribution of Cd and Te elements in the CdTe films. The fundamental optical parameters like band gap and extinction coefficient are calculated from the transmission spectra. The possible optical transition in these films is found to be direct and allowed. The charge transport phenomenon appears to be space charge limited conduction. Various electrical parameters were determined from the I – V analysis.
238 citations
TL;DR: A review of the literature on rare-earth oxide thin films and their use as dielectrics can be found in this article, where ternary oxides with aluminum and silicon are also highlighted.
Abstract: Rare-earth oxides as dielectric materials may find their most important use in microelectronics as gate oxides in transistors. This paper reviews the literature on rare-earth oxide thin films and their use as dielectrics. Besides binary oxides and their combinations, ternary oxides with aluminum and silicon are also highlighted. Thin films have most often been fabricated by physical vapor deposition (PVD) methods but recently the chemical methods have gained considerable attention. Especially, atomic layer deposition (ALD) of rare-earth containing oxides has recently been studied by several groups.
143 citations
TL;DR: In this article, the authors present a critical analysis of various electrical properties of MIM devices, with supporting experimental evidence, showing that the emission of electrons through the top electrode becomes most apparent at the onset of the voltage-controlled negative resistance (VCNR) region.
Abstract: Some insulating films of thickness normally between 10 nm and 600 nm in both sandwich and planar configurations (MIM devices) undergo a forming process in which the formed devices acquire a permanently, irreversibly enhanced conductivity, The I(V) characteristics with a region of voltage-controlled negative resistance (VCNR) are influenced by the fabrication methods, electrode metals and ambient conditions such as temperature and pressure. The emission of electrons through the top electrode becomes most apparent at the onset of the VCNR region. Switching and memory phenomena are also observed. In this paper we present a critical analysis of various electrical properties of MIM devices, with supporting experimental evidence.
95 citations
TL;DR: In this paper, structural and optical properties of as-prepared and annealed thermal evaporated CdTe films were investigated, and the results confirm the films nanostructure property.
Abstract: Structural and optical properties of as-prepared and annealed thermal evaporated CdTe films were investigated. The annealing temperature (373–523 K) affects both structural and optical parameters. Polycrystalline nature with preferred (1 1 1), (2 0 0) and (2 2 0) orientations was released, the corresponding two theta is 23.15°, 27.42° and 40.26° respectively. Structural parameters as dislocation density, inter-planer distance, the number of crystallites per unit surface area, lattice constant, crystallite size and strain could be determined as a function of annealing. The results confirm the films nanostructure property. The optical gap, refractive index, dielectric constant and optical conductivity increase as a function of annealing. These effects were attributed to the nano structural property and the partial reduction of the defect density.
83 citations