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K.H. Maxwell

Bio: K.H. Maxwell is an academic researcher. The author has contributed to research in topics: Adsorption & Oxygen. The author has an hindex of 4, co-authored 4 publications receiving 76 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the adsorption of oxygen on clean silicon surfaces produced by crushing in vacuo has been examined in the pressure range 30-200 μ Hg of oxygen at room temperature.

44 citations

Journal ArticleDOI
TL;DR: In this paper, the adsorption of various gases on clean germanium surfaces has been investigated, and the various classes of adsorbent-adsorbate binding forces have been examined with a view to identifying the type of binding force predominant in the adaption.

15 citations

Journal ArticleDOI
TL;DR: In this article it was shown that oxygen reacted with the germanium surface in spite of the material already adsorbed thereon, and that oxygen displaced most of the water from the surface.

11 citations

Journal ArticleDOI
TL;DR: In this paper, the adsorption of chlorine on clean germanium surfaces was studied in an all-glass system by crushing a single crystal disc of Germanium in the presence of the gas and following the pressure changes.

6 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the authors compare and discuss recent experimental and theoretical results in the field of H2O-solid interactions, and emphasize studies of low (submonolayer) coverages of water on well-characterized, single-crystal surfaces of metals, semiconductors and oxides.

2,096 citations

Journal ArticleDOI
TL;DR: In this article, high-resolution electron energy loss spectroscopy (EELS) was used to study the early stages of silicon oxidation and showed that the first two stages involve atomic oxygen in bridging positions between silicon atoms.
Abstract: Using high-resolution electron energy loss spectroscopy (EELS) the vibrations of Si(111) and Si(100) surfaces in the early stages of oxidation have been investigated. Three different stages of oxidation, the last being the formation of a thin layer of vitreous SiO2 are identified when the surfaces are held at a temperature of 700K during the exposure with molecular oxygen. We show that also the first two stages involve atomic oxygen in bridging positions between silicon atoms. Small exposures at low temperatures (100 K) produce vibrational features of a different, possibly molecular, species. For higher exposures at the same temperature the spectrum again develops the characteristics of atomic oxygen and the molecular species eventually disappears. Exposure at room temperature leads to a mixture of atomic and molecular oxygen for smaller exposures and to purely atomic oxygen for exposures greater than ∼ 102 L. At room temperature even exposures as high as ∼ 1011 L do not produce the spectrum of vitreous SiO2. The same is found for the “natural”, room temperature grown, oxide layer on silicon wafers which we have studied by introducing the sample into the spectrometer through an air-lock. Annealing of the wafer to 700 K produced the characteristic spectrum of vitreous SiO2. The results are discussed in comparison with previous work.

248 citations

Journal ArticleDOI
J. J. Lander1, J. Morrison1
TL;DR: In this article, low-energy electron diffraction data for superstructures on the clean (100) and (111) surfaces of silicon, and for structures formed by a monolayer of iodine and a monoline of phosphorus on the ( 111) surface were presented.
Abstract: Low‐energy electron diffraction data are presented for superstructures on the clean (100) and (111) surfaces of silicon, and for structures formed by a monolayer of iodine and a monolayer of phosphorus on the (111) surface. Conventionally defined structure factors, modified for atomic structures a few layers thick, have been used to analyze two of these structures with results which are very probably correct. Insufficient data are apt to be the most serious limitation of the technique in structure determination. Observed transitions for the clean surface structures are described and results are presented for transition temperatures and rates of reaction of the surfaces with iodine and with phosphorus as a function of temperature and pressure. Iodine appears to be adsorbed in the ionic state and the calculated Si–I distance is about 3.2 A. The data show that the physical and chemical properties of a silicon surface at low temperatures depend very much on thermal, chemical, and mechanical history, and the m...

196 citations

Journal ArticleDOI
G.A. Bootsma1, F. Meyer1
TL;DR: In this paper, gas adsorption in the monolayer range on silicon and germanium surfaces was studied by means of ellipsometry and the results were compared with volumetric measurements on powders.

174 citations

Journal ArticleDOI
TL;DR: In this paper, the adsorption kinetics of O2 on Si(100) between temperatures of 120 and 800 K and oxygen coverages up to 2 monolayers, and the desorption rate constant obtained from time-resolved XPS measurements was orders of magnitude less.

140 citations