Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

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A roadmap for graphene

The rise time of intense radiation determines the maximum field strength atoms can be exposed to before their polarizability dramatically drops due to the detachment of an outer electron. Recent progress in ultrafast optics has allowed the generation of ultraintense light pulses comprising merely a few field oscillation cycles. The arising intensity gradient allows electrons to survive in their bound atomic state up to external field strengths many times higher than the binding Coulomb field and gives rise to ionization rates comparable to the light frequency, resulting in a significant extension of the frontiers of nonlinear optics and (nonrelativistic) high-field physics. Implications include the generation of coherent harmonic radiation up to kiloelectronvolt photon energies and control of the atomic dipole moment on a subfemtosecond $(1{\mathrm{f}\mathrm{s}=10}^{\mathrm{\ensuremath{-}}15}\mathrm{}\mathrm{s})$ time scale. This review presents the landmarks of the 30-odd-year evolution of ultrashort-pulse laser physics and technology culminating in the generation of intense few-cycle light pulses and discusses the impact of these pulses on high-field physics. Particular emphasis is placed on high-order harmonic emission and single subfemtosecond extreme ultraviolet/x-ray pulse generation. These as well as other strong-field processes are governed directly by the electric-field evolution, and hence their full control requires access to the (absolute) phase of the light carrier. We shall discuss routes to its determination and control, which will, for the first time, allow access to the electromagnetic fields in light waves and control of high-field interactions with never-before-achieved precision.

Intense few-cycle laser fields: Frontiers of nonlinear optics

The optical conductance of monolayer graphene is defined solely by the fine structure constant, α =  (where e is the electron charge, is Dirac's constant and c is the speed of light). The absorbance has been predicted to be independent of frequency. In principle, the interband optical absorption in zero-gap graphene could be saturated readily under strong excitation due to Pauli blocking. Here, use of atomic layer graphene as saturable absorber in a mode-locked fiber laser for the generation of ultrashort soliton pulses (756 fs) at the telecommunication band is demonstrated. The modulation depth can be tuned in a wide range from 66.5% to 6.2% by varying the graphene thickness. These results suggest that ultrathin graphene films are potentially useful as optical elements in fiber lasers. Graphene as a laser mode locker can have many merits such as lower saturation intensity, ultrafast recovery time, tunable modulation depth, and wideband tunability.

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Atomic‐Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers

The optical conductance of monolayer graphene is defined solely by the fine structure constant. The absorbance has been predicted to be independent of frequency. In principle, the interband optical absorption in zero-gap graphene could be saturated readily under strong excitation due to Pauli blocking. Here, we demonstrate the use of atomic layer graphene as saturable absorber in a mode-locked fiber laser for the generation of ultrashort soliton pulses (756 fs) at the telecommunication band. The modulation depth can be tuned in a wide range from 66.5% to 6.2% by varying the thickness of graphene. Our results suggest that ultrathin graphene films are potentially useful as optical elements in fiber lasers. Graphene as a laser mode locker can have many merits such as lower saturation intensity, ultrafast recovery time, tunable modulation depth and wideband tuneability.

Atomic layer graphene as saturable absorber for ultrafast pulsed lasers

Ultrafast lasers, which generate optical pulses in the picosecond and femtosecond range, have progressed over the past decade from complicated and specialized laboratory systems to compact, reliable instruments. Semiconductor lasers for optical pumping and fast optical saturable absorbers, based on either semiconductor devices or the optical nonlinear Kerr effect, have dramatically improved these lasers and opened up new frontiers for applications with extremely short temporal resolution (much smaller than 10 fs), extremely high peak optical intensities (greater than 10 TW/cm2) and extremely fast pulse repetition rates (greater than 100 GHz).

Recent developments in compact ultrafast lasers

Intracavity semiconductor saturable absorber mirrors (SESAM's) offer unique and exciting possibilities for passively pulsed solid-state laser systems, extending from Q-switched pulses in the nanosecond and picosecond regime to mode-locked pulses from 10's of picoseconds to sub-10 fs. This paper reviews the design requirements of SESAM's for stable pulse generation in both the mode-locked and Q-switched regime. The combination of device structure and material parameters for SESAM's provide sufficient design freedom to choose key parameters such as recovery time, saturation intensity, and saturation fluence, in a compact structure with low insertion loss. We have been able to demonstrate, for example, passive modelocking (with no Q-switching) using an intracavity saturable absorber in solid-state lasers with long upper state lifetimes (e.g., 1-/spl mu/m neodymium transitions), Kerr lens modelocking assisted with pulsewidths as short as 6.5 fs from a Ti:sapphire laser-the shortest pulses ever produced directly out of a laser without any external pulse compression, and passive Q-switching with pulses as short as 56 ps-the shortest pulses ever produced directly from a Q-switched solid-state laser. Diode-pumping of such lasers is leading to practical, real-world ultrafast sources, and we will review results on diode-pumped Cr:LiSAF, Nd:glass, Yb:YAG, Nd:YAG, Nd:YLF, Nd:LSB, and Nd:YVO/sub 4/.

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Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers

We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rates.

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Semiconductor saturable absorber mirror structures with low saturation fluence

We discuss power scaling of passively mode-locked lasers using multiple laser heads in the resonator. We experimentally compared two different approaches for the cavity design, both using three side-pumped Nd:YAG laser heads. We obtained a record-high average output power of up to 27 W with close to diffraction-limited beam quality, a pulse duration of 19 ps, a pulse energy of 0.5 μJ, and 23 kW peak power. Single-pass second-harmonic generation in a 10-mm-long LBO crystal yields 16.2 W of 532-nm radiation.

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Passively mode-locked high-power Nd:YAG lasers with multiple laser heads

We demonstrate passively mode-locked diode-pumped Nd:glass lasers with different media such as silicate, phosphate, and fluorophosphate that are homogeneously or inhomogeneously broadened. An antiresonant Fabry-Perot saturable absorber starts and stabilizes the soliton mode-locked Nd:glass lasers, producing pulses as short as 130 fs at an average output power of 100 mW. With a cw Ti:sapphire pump laser we obtain pulses as short as 90 fs.

Diode-pumped mode-locked Nd:glass lasers with an antiresonant Fabry–Perot saturable absorber

We report on self-starting passively mode-locked diode-pumped 1.3-microm lasers obtained by use of semiconductor saturable absorbers. We achieved pulses as short as 4.6 ps in Nd:YVO(4) and 5.7 ps in Nd:YLF with average output powers of 50 and 130 mW, respectively.

K.J. Weingarten

Papers

Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers

Semiconductor saturable absorber mirror structures with low saturation fluence

Passively mode-locked high-power Nd:YAG lasers with multiple laser heads

Diode-pumped mode-locked Nd:glass lasers with an antiresonant Fabry–Perot saturable absorber

Diode-pumped passively mode-locked 1.3-microm Nd:YVO(4) and Nd:YLF lasers by use of semiconductor saturable absorbers.