Author

# K. P. Ghatak

Bio: K. P. Ghatak is an academic researcher from University of Engineering & Management. The author has contributed to research in topics: Terahertz radiation & Magnetic field. The author has an hindex of 3, co-authored 7 publications receiving 15 citations.

##### Papers

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TL;DR: An attempt is made to study the 2D Fermi Level Mass in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II- VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of formalism.

Abstract: In this paper an attempt is made to study the 2D Fermi Level Mass (FLM) in accumulation and inversion layers of nano MOSFET devices made of nonlinear optical, III-V, ternary, Quaternary, II-VI, IV-VI, Ge and stressed materials by formulating 2D carrier dispersion laws on the basis of k → ⋅ p → ⋅ formalism and considering the energy band constants of a particular material. It is observed taking accumulation and inversion layers of Cd3As2, CdGeAs2, InSb, Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP, CdS, GaSb and Ge as examples that the FLM depends on sub band index for nano MOSFET devices made of Cd3As2 and CdGeAs2 materials which is the characteristic features such 2D systems. Besides, the FLM depends on the scattering potential in all the cases and the same mass changes with increasing surface electric field. The FLM exists in the band gap which is impossible without heavy doping.

5 citations

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01 Jan 20214 citations

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01 Jan 2022TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.

Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations

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TL;DR: This paper shows that the same concept leads to the simple and compact derivations of the 3D, 2D and 1D Planck's radiation laws in one hand and its two dimension dependent extremes namely Rayleigh-Jeans and Wien's laws on the other hand.

Abstract: The concept of dimension dependent density-of-states function (DOS) is vital in the area of nanoscience and nanotechnology. In this paper we show that the same concept leads to the simple and compact derivations of the 3D, 2D and 1D Planck's radiation laws in one hand and its two dimension dependent extremes namely Rayleigh-Jeans and Wien's laws on the other hand. Besides we have also studied the 3D, 2D and 1D Stefan-Boltzmann laws in this context.

3 citations

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01 Jan 2022TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.

Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations

##### Cited by

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01 Jan 2020TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.

Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.

4 citations

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11 Aug 2014

TL;DR: In this article, the ER in NIPI structures of Heavily Doped (HD) Non-Parabolic Semiconductors under external photo-excitation was investigated.

Abstract: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The ER in NIPI Structures of HD Non-Parabolic Semiconductors.- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors.- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications.- Conclusion and Scope for Future.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The ER in HDS Under Magnetic Quantization.- The ER in HDS and their Nano-Structures Under Cross- Fields Configuration.- The ER for HD III-V, Ternary and Quaternary Semiconductors Under Strong Electric Field.- The ER in Super-lattices of HDS Under Magnetic Quantization.

4 citations

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01 Jan 2022TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.

Abstract: In this chapter, we study the influences of size quantization, magnetic quantization, cross-fields configurations and inversion layers on the screening length (SL) in opto-electronic compounds. We note that the screening length oscillates with inverse quantizing magnetic field under magnetic quantization due to SdH effect, exhibits quantum jumps with nano-thickness under size quantization and changes with alloy composition, electron statistics and electric field in various manners for different types of opto-electronic compounds as considered here. All the results in the absence of terahertz frequency have further been plotted to exhibit the mathematical compatibility in this context.

3 citations