Probability Distributions.- Linear Models for Regression.- Linear Models for Classification.- Neural Networks.- Kernel Methods.- Sparse Kernel Machines.- Graphical Models.- Mixture Models and EM.- Approximate Inference.- Sampling Methods.- Continuous Latent Variables.- Sequential Data.- Combining Models.

Pattern Recognition and Machine Learning

Tandem solar cells that pair silicon with a metal halide perovskite are a promising option for surpassing the single-cell efficiency limit. We report a monolithic perovskite/silicon tandem with a certified power conversion efficiency of 29.15%. The perovskite absorber, with a bandgap of 1.68 electron volts, remained phase-stable under illumination through a combination of fast hole extraction and minimized nonradiative recombination at the hole-selective interface. These features were made possible by a self-assembled, methyl-substituted carbazole monolayer as the hole-selective layer in the perovskite cell. The accelerated hole extraction was linked to a low ideality factor of 1.26 and single-junction fill factors of up to 84%, while enabling a tandem open-circuit voltage of as high as 1.92 volts. In air, without encapsulation, a tandem retained 95% of its initial efficiency after 300 hours of operation.

Monolithic perovskite/silicon tandem solar cell with >29% efficiency by enhanced hole extraction

With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.

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High-efficiency crystalline silicon solar cells: status and perspectives

Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

We analyze the uncertainty of the coefficient of band-to-band absorption of crystalline silicon. For this purpose, we determine the absorption coefficient at room temperature (295 K) in the wavelength range from 250 to 1450 nm using four different measurement methods. The data presented in this work derive from spectroscopic ellipsometry, measurements of reflectance and transmittance, spectrally resolved luminescence measurements and spectral responsivity measurements. A systematic measurement uncertainty analysis based on the Guide to the expression of uncertainty in measurement (GUM) as well as an extensive characterization of the measurement setups are carried out for all methods. We determine relative uncertainties of the absorption coefficient of 0.4% at 250 nm, 11% at 600 nm, 1.4% at 1000 nm, 12% at 1200 nm and 180% at 1450 nm. The data are consolidated by intercomparison of results obtained at different institutions and using different measurement approaches.

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Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

This letter introduces a method based on electroluminescence imaging to determine mappings of the local series resistance of large area semiconductor devices such as solar cells. The method combines the local electroluminescence emission Φi(U) and its derivative Φi′(U) with respect to the applied voltage U. The combined analysis of these two quantities yields the local series resistance Rise and proves the physical validity of the used current transport model and thus the physical relevance of the determined Rise value. The method is verified on a monocrystalline silicon solar cell with local shunts and local series resistance problems.

Series resistance imaging of solar cells by voltage dependent electroluminescence

Light Induced Degradation of Rear Passivated mc-Si Solar Cells

We perform recombination current and series resistance imaging on large-area crystalline silicon solar cells using a combined analysis of camera-based dark lock-in thermography (DLIT) and electroluminescence (EL) imaging. The solar cells are imaged both by DLIT and EL under identical operating conditions. The quantitative analysis of the DLIT measurement produces an image of the local heating power and the EL picture results in an image of the local cell voltage. Combining the two images pixel by pixel allows us to calculate images of the local recombination current and the local series resistance of the solar cell.

Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography

The current-voltage (I–V) characteristics of industrially fabricated, crystalline silicon solar cells are often influenced by non-linear shunts that originate from localized, highly disturbed regions and cause ideality factors n > 2. We show that recombination within such locations needs model descriptions that go beyond the Shockley-Read-Hall (SRH) approximation, because the density of defects is so high that recombination does not occur via isolated, but coupled defect states. We use a variant of coupled defect level (CDL) recombination, the donor-acceptor-pair (DAP) recombination, but via deep levels (as opposed to shallow levels). With this model, we quantitatively reproduce the I–V curves of solar cells that we subjected to various degrees of cleaving, laser scribing or diamond scratching to form shunt locations in a controlled manner. The suggested model explains the transition from ideality factors n   2 when going from low to high defect densities. We also explain the non-saturating reverse I–V characteristics. We show that an additional source of currents with n > 2 is SRH recombination in an inversion layer that extends from the front p-n junction to the rear contact along the cell’s edge or along a micro-crack.

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K. Ramspeck

Papers

Series resistance imaging of solar cells by voltage dependent electroluminescence

Light Induced Degradation of Rear Passivated mc-Si Solar Cells

Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography

Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation

Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology