Author
K. Sakai
Bio: K. Sakai is an academic researcher from Kyushu University. The author has contributed to research in topics: Acceptor & Nanowire. The author has an hindex of 1, co-authored 1 publications receiving 13 citations.
Papers
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TL;DR: In this article, Si coated with Sb and Au as substrate using carbothermal evaporation method was used to synthesize Sb doped ZnO nanowires with a diameter of 1μm.
13 citations
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TL;DR: In this article, an ultraviolet photodetector with an external quantum efficiency of 64.5% was obtained based on the ZnO microwire p-n homojunction.
Abstract: A highly efficient ultraviolet photodetector was successfully obtained based on a Sb-doped p-type ZnO microwire p–n homojunction which consisted of a single Sb-doped p-type ZnO microwire and a single undoped ZnO microwire. The ultralong Sb-doped ZnO single crystalline microwires were synthesized via a chemical vapor deposition method. The ZnO microwire homojunction showed well-defined rectification characteristics, which indicated the p-type conductivity of the Sb-doped ZnO microwire. An ultraviolet photodetector with an external quantum efficiency of 64.5% was obtained based on the ZnO microwire p–n homojunction. The photodetector showed high wavelength selectivity with a full width at half maximum of 6 nm for the photoresponse peak located at 386 nm.
51 citations
TL;DR: In this paper, an ultrasonic irradiation method was applied for preparation of Sb-doped ZnO nanostructures in water at 60min without using any organic compound and additional post treatment.
42 citations
TL;DR: In this paper, a ZnO homojunction UV photodetector based on Sb-doped p-type and n-type nanorods was fabricated by a low temperature solution method.
Abstract: A ZnO homojunction UV photodetector based on Sb-doped p-type ZnO nanorods (NRs) and n-type ZnO NRs was fabricated by a low temperature solution method. The fabricated homojunction shows well-defined rectifying characteristics, confirming the p-type conductivity of the Sb-doped ZnO NRs. Moreover, a high UV sensitivity of 3300% and a fast reset time to UV illumination are also achieved.
27 citations
TL;DR: In this article, the authors have synthesized Sb-doped p-type ZnO nanowires on Si (100) substrates by chemical vapor deposition with Aucatalyst.
Abstract: P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited ∼2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices.
24 citations
TL;DR: In this article, the authors report highly oriented one-dimensional growth of zinc oxide (ZnO) nanorod arrays (NRA) which were later utilized to fabricate hybrid photodiodes having the typical photodiode configuration of indium tin oxide (ITO), ZnO/poly(3-hexylthiophene) (P3HT)/Ag.
Abstract: We report highly oriented one-dimensional (1-D) growth of zinc oxide (ZnO) nanorod arrays (NRA) which were later utilized to fabricate hybrid photodiodes having the typical photodiode configuration of indium tin oxide (ITO)/ZnO/poly(3-hexylthiophene) (P3HT)/Ag. These functional hybrid bilayered photodiodes were found to have high rectification ratio under dark conditions and demonstrated enhanced responsivity under light illumination. Further, we studied the effect of an intermediate electron blocking layer of poly(ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) on the photodiode characteristics and demonstrated ITO/ZnO/P3HT/PEDOT:PSS/Ag photodiodes, reporting very high rectification ratio and responsivity in this bilayered configuration. The observed results are explained on the basis of the increased surface area of contact between the ZnO nanorods and the P3HT, and also the efficient hole injection into the P3HT layer from the top Ag electrode.
19 citations