K. Tom

Bio: K. Tom is an academic researcher from Victoria University, Australia. The author has contributed to research in topics: Bandgap voltage reference & Integrated injection logic. The author has an hindex of 1, co-authored 1 publications receiving 6 citations.

Curvature compensated CMOS bandgap with sub 1V supply

Abstract: We describe a bandgap circuit capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18/spl mu/m CMOS technology and operates with 0.9 V supply voltage, consuming 5/spl mu/A current. The circuit achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60/spl deg/ centigrade.

Low voltage area efficient current-mode CMOS bandgap reference in deep submicron technology

Abstract: We report on the design of a low voltage area efficient current-mode CMOS bandgap reference implemented in 130 nm technology. The conventional voltage-mode and current-mode bandgap reference architectures with their properties and performance limiting factors are described. Due to the low supply voltage V dd requirement the current-mode architecture was chosen. The simulated power dissipation P diss = 150 μW at the nominal supply voltage V DD = 1.2 V. As a result of Monte-Carlo analysis the average output reference current I REF ≈ 1 μA and its standard deviation σ = 11 nA are obtained. The reference current changes ΔI REF = 8 nA over the temperature range from 0 o C up to 100 o C. The reference current changes ΔI ref = 4 nA for the supply voltage V dd within the range from 1 V up to 1.5 V. The silicon chip area occupation is 0.07 mm 2 .

Design of a Bandgap Reference Circuit with Trimming for Operation at Multiple Voltages and Tolerant to Radiation in 90nm CMOS Technology

Abstract: The present article describes the design of a new low-voltage radiation-tolerant band gap reference circuit. The proposed circuit has been designed for biasing analog modules in the slow control of the Data Handling Processor for reading DEPFET sensors in the Super KEK-B particle accelerator in Japan. It has been implemented in a 90nm standard CMOS technology. The BGR circuit provides a sub-1V voltage reference. It is possible to operate the circuit with 1 and 1.2V supplies. For that, a trimming net based on resistors was included. Tolerance to radiation is achieved by means of enclosed layout transistors and guard rings. The total area of the BGR is 181x110μm2. The power consumption is set at 18.70uA for the 1V supply case and at 55.18uA for the 1.2V supply case.

Precision Low Voltage and Current References

Abstract: With shrinking of technologies and its applications, on-chip precision low voltage and current reference generation for analog and mixed signal circuits are becoming difficult. This paper presents on-chip complementary metal oxide semiconductor low voltage and current reference circuits design methodologies for low voltage requirements. The designs are based on the bandgap reference and beta multiplier circuits. These reference circuits are prone to instability and can lock into undesired stable state of operation. To avoid these two conditions one needs to satisfy some conditions. Such issues of these reference circuits for practical implementation are discussed. Circuits like Poweron-reset circuit and startup circuits are used to avoid these state of operations. The peculiarity of theses circuits are that they can be tuned to the specific low voltage and low power requirements.

Integrated sensors: expanding the boundaries of microsystem design for multidisciplinary customers

Abstract: One of the main challenges in technology education is how to keep up with the ever changing tools, processes, and standards dictated by newly developed tools not available at the university. Silicon foun dries currently offer custom processes that can be adapte d to develop sensors, optoelectronic devices and microelectromechanisms with a small budget. As a result, students from different scientific areas, in electr onics and electrical engineering, profit from the same idea. Another advantage of this outsourcing is the possibility of sharing circuits, laboratory experiments, and courseware among universities and among disciplines, democratizing t he educational experience and, thus, improving the formation of qualified human resources. With the knowledge of the design rules any person can submit his/her project as any of their counterparts in ano ther country. During the post-processing steps, the sens ing element can be tailored toward the specific applica tion they are designed for. Students from several backgrounds are involved in the early and later sta ges of the process, and help with debugging, as well as wi th field testing. Examples of interdisciplinary projects rea lized under this paradigm include: electrophysiological signal microelectromechanical systems, signal acquisition, electronic nose, telematic system for several appli cations such as sensors network, cells culture, and field e mission devices.