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K. V. Kozlov

Researcher at Moscow State University

Publications -  35
Citations -  1941

K. V. Kozlov is an academic researcher from Moscow State University. The author has contributed to research in topics: Atmospheric pressure & Spectroscopy. The author has an hindex of 13, co-authored 31 publications receiving 1802 citations. Previous affiliations of K. V. Kozlov include Moscow Power Engineering Institute & University of Greifswald.

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The barrier discharge: basic properties and applications to surface treatment

TL;DR: Barrier discharges (BDs) produce highly non-equilibrium plasmas in a controllable way at atmospheric pressure, and at moderate gas temperature, and provide the effective generation of atoms, radicals and excited species by energetic electrons.
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Spatio-temporally resolved spectroscopic diagnostics of the barrier discharge in air at atmospheric pressure

TL;DR: In this paper, the authors used spatio-temporal cross-correlation spectroscopy (CCS) to carry out diagnostic measurements of barrier discharge (BD) in air at atmospheric pressure.
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Intensity ratio of spectral bands of nitrogen as a measure of electric field strength in plasmas

TL;DR: In this article, the spectral bands of molecular nitrogen corresponding to transitions N + (B 2 � + g,v = 0) → N + X 2 �+,V = 0, N2(C 3 � u,v = 2) → n 2(B 3 � g,v= 0) and n 2 (C 3 ǫ u,V = 2 ) → N 2 (B 3 g,V= 5) as a function of the applied electric field strength.
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Investigation of the filamentary and diffuse mode of barrier discharges in N 2 /O 2 mixtures at atmospheric pressure by cross-correlation spectroscopy

TL;DR: In this article, spatially resolved cross-correlation spectroscopy and current pulse oscillography were used to carry out systematic investigations of the barrier discharge (BD) in the binary gas mixtures N2/O2 at atmospheric pressure.
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Deposition Process Based on Organosilicon Precursors in Dielectric Barrier Discharges at Atmospheric Pressure—A Comparison

TL;DR: In this paper, the influence of the filament properties on the deposition of organosilicon on planar aluminium substrates has been studied using dielectric barrier discharges (DBD) at atmospheric pressure.