Provided are methods and apparatuses for smoothly transitioning from a first plasma condition to a second plasma condition in a plasma processing chamber. An apparatus for plasma processing may be equipped with an RF power supply coupled to an impedance matching network to smoothly switch from a continuous wave (CW) plasma to a pulsing plasma, reversely, or in alternation without quenching the plasma. Or, the plasma processing chamber may be equipped to smoothly switch from a pulsing plasma at a first duty cycle to a pulsing mode at a second duty cycle without quenching the plasma. Such transitions may occur by ramping RF power, ramping duty cycle, and/or ramping pulsing frequency of the RF power supply being delivered to the plasma processing chamber so that impedance can be smoothly changed and matched by the impedance matching network during the transitions.

Methods and apparatuses for controlling transitions between continuous wave and pulsing plasmas

Methods and systems for remotely detecting gases and emissions of gases are provided. Data is collected from a scene using a sensor system. The data is initially optionally processed as 1D data to remove noise, and is then assigned a confidence value by processing the 1D data using a neural network. The confidence value is related to a likelihood that an emission has been detected at a particular location. The processed 1D data, including the confidence value, is gridded into 2D space. The 2D data is then processed using a neural network to assign a 2D confidence value. The 2D data can be fused with RGB data to produce a map of emission source locations. The data identifying emissions can also be processed using a neural network to determine and output emission rate data.

Method and systems for remote emission detection and rate determination

In one embodiment, a semiconductor manufacturing apparatus includes an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles. The apparatus further includes a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

The invention discloses an etching terminal point monitoring method of Bosch technology, and Bosch etching method, which can determine the etching terminal point in a more accurate way and can preventsubstrate damage caused by excessive etching. In the Bosch technology, continuous monitoring is conducted and OES signal is obtained. The invention is characterized in that each etching step or eachdeposition step is considered as a unit, the obtained OES signal is processed to determine the etching terminal point.

Etching terminal point monitoring method of Bosch technology, and Bosch etching method

A method for plasma cleaning a plasma processing chamber is provided. A cleaning gas is flowed into the plasma processing chamber. The cleaning gas is formed into a plasma, wherein the plasma cleans the plasma processing chamber, wherein the plasma becomes a spent gas. The spent gas is exhausted from the plasma processing chamber into a gas cell. Light absorption within the gas cell is measured. A time trace of the measured light absorption within the gas cell is generated. The time trace of the measured light absorption within the gas cell is used to determine an end point for the plasma cleaning of the plasma processing chamber.

Method for determining cleaning endpoint

A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

System and Method for Detecting a Process Point in Multi-Mode Pulse Processes

To perform in-situ measurement of by-products during plasma processing, which does not change from a chamber to another and from a wet cleaning process to another.SOLUTION: A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.SELECTED DRAWING: Figure 1A

Method and apparatus for determining process parameters

Controller, method and computer-readable medium for detecting a process point in multi-mode pulse processes

An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support is within the processing chamber. A gas inlet provides a process gas into the processing chamber. A gas source provides the process gas to the gas inlet. An exhaust pump pumps gas from the processing chamber. A parameter measurement system comprises a cavity ring down device in fluid communication with the processing chamber, comprising a first cavity ring down mirror on a first side of the cavity ring down device and a second cavity ring down mirror on a second side of the cavity ring down device spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror.

Apparatus with optical cavity for determining process rate

A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.

Kabouzi Yassine

Papers

System and Method for Detecting a Process Point in Multi-Mode Pulse Processes

Method and apparatus for determining process parameters

Controller, method and computer-readable medium for detecting a process point in multi-mode pulse processes

Apparatus with optical cavity for determining process rate

Method and apparatus for determining etch process parameters