K
Kamaljit Rangra
Researcher at Indian Institute of Technology, Jodhpur
Publications - 84
Citations - 635
Kamaljit Rangra is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Insertion loss & Capacitive sensing. The author has an hindex of 11, co-authored 80 publications receiving 511 citations. Previous affiliations of Kamaljit Rangra include University of Trento & The National Academy of Sciences, India.
Papers
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Symmetric toggle switch—a new type of rf MEMS switch for telecommunication applications: Design and fabrication
Kamaljit Rangra,Benno Margesin,Leandro Lorenzelli,Flavio Giacomozzi,Cristian Collini,Mario Zen,Giovanni Soncini,Laura del Tin,R. Gaddi +8 more
TL;DR: In this paper, a symmetric toggle switch (STS) is proposed for 8-14 GHz applications with low actuation voltage and high isolation, for high power and reliability applications in telecommunication.
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Design of novel compact anti-stiction and low insertion loss RF MEMS switch
TL;DR: In this article, a novel torsional RF MEMS capacitive switch design on silicon substrate is presented, which optimized switch topology such as reduction in up-state capacitance results in insertion loss better than 0.1 dB till 20 GHz.
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Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RF-MEMS switch
Mahesh Angira,Kamaljit Rangra +1 more
TL;DR: In this article, a low insertion loss capacitive shunt RF-MEMS switch with float metal concept is proposed to reduce the capacitance in up-state of the device.
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Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications
TL;DR: In this paper, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin dioxide (FTO), and silicon (Si) wafer.
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Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling
Deepak Bansal,Deepak Bansal,Anuroop Bajpai,Pramod Kumar,Maninder Kaur,Amit Kumar,Amit Kumar,Achu Chandran,Kamaljit Rangra,Kamaljit Rangra +9 more
TL;DR: In this paper, a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement is proposed, which reduces the pull-in voltage from 70 V to 16.2 V and the magnitude of deformation from 8 µm to 1 µm.