K
Kamaljit Rangra
Researcher at Indian Institute of Technology, Jodhpur
Publications - 84
Citations - 635
Kamaljit Rangra is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Insertion loss & Capacitive sensing. The author has an hindex of 11, co-authored 80 publications receiving 511 citations. Previous affiliations of Kamaljit Rangra include University of Trento & The National Academy of Sciences, India.
Papers
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Journal ArticleDOI
Online exposure dose correction during electron beam pattern delineation by blanking width modulation
TL;DR: In this article, the exposure current is monitored in-situ and the required correction to the exposure time is provided automatically in order to maintain uniform exposure globally, which leads to the loss of global linewidth control.
Proceedings ArticleDOI
Design and optimization of RF MEMS T-type switch for redundancy switch matrix applications
TL;DR: In this paper, a planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) T-type switch is proposed to perform signal routing in three operational states.
Journal ArticleDOI
Optimization of Thick Photoresist for Uniform Thickness in RF MEMS Applications
TL;DR: In this article, the authors optimized a special thick photoresist (HiPR 6517) for RF MEMS SPST switches for better yield and uniformity, and the measured pull-in voltage and the switch's resonant frequency are 13.00 V and 12.32 kHz, respectively.
Journal ArticleDOI
Sacrificial layer optimization for RF MEMS switches
Prem Kumar,Prem Kumar,Deepak Bansal,Amit Kumar,Anuroop Bajpai,Khushbu Mehta,Ashudeep,Kamaljit Rangra,Dharmendar Boolchandani +8 more
TL;DR: In this paper, the authors introduced the characterization of AZ-P4620 photoresist as a sacrificial layer for Radio Frequency MEMS (RF MEMS) switches, which includes a suspended structure.
Journal ArticleDOI
Performance improvement of a reconfigurable series-shunt switch via asymmetric structure based RF-MEMS capacitive switch
TL;DR: In this paper, a series combination of metal to metal contact and capacitive RF-MEMS switches for multi-band wireless applications is presented, where a novel capacitive shunt switch is used and the response has been compared with a conventional shunt device.