There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

American Society for Testing and Materials

We investigate poly(methylmethacrylate) (PMMA) development processing with cold developers (4–10 °C) for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography (EBL). We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold development. Fabrication of single-particle-width Au nanoparticle lines was performed by lift-off. We discuss key factors for formation of PMMA trenches at the sub-10 nm scale.

/pdf/sub-10-nm-electron-beam-lithography-using-cold-development-1ez0lpse16.pdf

Sub-10 nm electron beam lithography using cold development of poly(methylmethacrylate)

Design and technology is an inspiring, rigorous and practical subject. Using creativity and imagination, pupils design and make products that solve real and relevant problems within a variety of contexts, considering their own and others’ needs, wants and values. They acquire a broad range of subject knowledge and draw on disciplines such as mathematics, science, engineering, computing and art. Pupils learn how to take risks, becoming resourceful, innovative, enterprising and capable citizens. Through the evaluation of past and present design and technology, they develop a critical understanding of its impact on daily life and the wider world. High-quality design and technology education makes an essential contribution to the creativity, culture, wealth and well-being of the nation.

What is Design and Technology

Design and Fabrication

Study of Effect of Non-Ionizing External EM-Field on Nerve Conduction

Conduction of an external sensed signal in the human nervous system can be defined in the form of electrical RC circuit equivalent which is realized very well by the researchers. In this paper, experimental results due to the continuous exposure to external cell phone radiation on the nervous system are being reported. Experimental data are stored using DSO and analysed by ORIGIN software. Comparison of rise/fall time of electrochemical KCL in the presence and absence of cell phone radiation is shown for this purpose.

Interaction of Cell Phone Radiations and Human Nervous System

Deliberate formation of unsupported resist microfragments called resist debris (RD) over the exposed pattern areas in electron beam lithography (EBL) is found to predict proximity exposure (PE) effects. Some simulation results and corresponding experimental results on RD formation discussed in the article show that both intra- and interpattern PE effects can be observed and explained from the nature of RD distribution. This gives a different kind of tool to tackle the problem of PE effect in EBL.

Resist debris formation and proximity exposure effect in electron beam lithography

This paper presents detail analysis of MEMS Fixed Fixed beam resonator. Force voltage analogy is being used here for calculating electrical two port equivalent circuit and its component values. Its resonance frequency tuning behavior analyzed by varying dc bias voltages ranging from 0 V to 10 V. The resonant frequency variation with varying elctode air gap is also prediticted.

Design and simulation of two port RF MEMS resonators

This paper presents the optimization in deflection caused by the inbuilt stress generated in mechanical or movable membrane of Symmetric Toggle RF MEMS Switch (STS). The movable membrane of STS was initially fabricated with two different materials, i.e. Chrome and Gold. The simulated deflection at 70°C was 11.9 µm, and experimental deflection was 11-12 µm. We present a study of inbuilt deflection reduction in multimetal movable layers without change in actuation voltage of the switch. The design study was initially carried out on cantilevers and then on structural membrane of STS. STS with proposed multilayer of Cr-Au-Au-Ti-Au has a simulated deflection of 0.56 µm at 70°C.

/pdf/design-optimization-of-deflection-caused-after-release-of-3mkumr5f9n.pdf

Kamaljit Rangra

Papers

Study of Effect of Non-Ionizing External EM-Field on Nerve Conduction

Interaction of Cell Phone Radiations and Human Nervous System

Resist debris formation and proximity exposure effect in electron beam lithography

Design and simulation of two port RF MEMS resonators

Design optimization of deflection caused after release of multilayer structural membrane of symmetric toggle switch