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Kamaljit Rangra

Researcher at Indian Institute of Technology, Jodhpur

Publications -  84
Citations -  635

Kamaljit Rangra is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Insertion loss & Capacitive sensing. The author has an hindex of 11, co-authored 80 publications receiving 511 citations. Previous affiliations of Kamaljit Rangra include University of Trento & The National Academy of Sciences, India.

Papers
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Optimization of Titanium Nitride Film for High Power RF MEMS Applications

TL;DR: In this paper, the effect of various N2 pressure on resistivity and hardness of TiN thin film was investigated in a DC magnetron reactive sputtering using a four inch high purity titanium target in a nitrogen (N2) environment.
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Design of Reliable Analog DMTL Phase Shifter with Improved Performance for Ku Band Applications

TL;DR: In this paper, an analog phase shifter based on distributed MEMS transmission line (DMTL) is designed for Ku band applications, where a new concept of stopper is incorporated to achieve high phase shift.
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Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

TL;DR: In this paper, the effect of sputtering power on the electrical and structural properties of Ru films was investigated experimentally using high-resolution X-ray diffraction and atomic force microscopy (AFM).
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Proximity exposure compensation and resist debris formation in electron beam lithography

TL;DR: In this article, a theoretical and experimental investigation into the formation of resist debris due to proximity exposure compensation (PEC) in electron beam lithography is provided, and the two dimensional simulation of resist contours in closely spaced rectangular patterns shows that the unsupported resist fragments originate at the top of the resist when a PEC scheme based on dose variation method is used to compensate for the proximity exposure effects within and between the patterns.
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On-wafer electro-mechanical characterization of silicon MEMS switches

TL;DR: In this article, the experimental setup and measurement results on RF MEMS switches fabricated for DC to 30 GHz applications are described, based on standard manual microprobe station providing dual pulse actuation voltage waveforms with programmable period and amplitude, ranging from 10/sup -5/ to 1 sec and 0-200 volts respectively.