Kamran Souri

Bio: Kamran Souri is an academic researcher from Delft University of Technology. The author has contributed to research in topics: CMOS & Signal. The author has an hindex of 13, co-authored 28 publications receiving 902 citations.

A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\pm$ 0.15 $ ^{\circ}$ C (3 $\sigma$ ) From $-$ 55 $^{\circ}$ C to 125 $^{\circ}$ C

Abstract: This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy- efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C (3σ) from -55°C to 125°C . Over the same range, devices from a second lot achieved an inaccuracy of ±0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.

A 6.3 µW 20 bit Incremental Zoom-ADC with 6 ppm INL and 1 µV Offset

Abstract: A 20-bit incremental ADC for battery-powered sensor applications is presented. It is based on an energy-efficient zoom ADC architecture, which employs a coarse 6-bit SAR conversion followed by a fine 15-bit ΔΣ conversion. To further improve its energy efficiency, the ADC employs integrators based on cascoded dynamic inverters for extra gain and PVT tolerance. Dynamic error correction techniques such as auto-zeroing, chopping and dynamic element matching are used to achieve both low offset and high linearity. Measurements show that the ADC achieves 20-bit resolution, 6 ppm INL and 1 μV offset in a conversion time of 40 ms, while drawing only 3.5 μA current from a 1.8 V supply. This corresponds to a state-of-the-art figure-of-merit (FoM) of 182.7 dB. The 0.35 mm2 chip was fabricated in a standard 0.16 μm CMOS process.

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from −55 to 125°C

Abstract: This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (−55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2nd-order ΔΣ conversion.

A 0.12 mm $^{2}$ 7.4 $\mu$ W Micropower Temperature Sensor With an Inaccuracy of $\pm$ 0.2 $^{\circ}$ C (3 $\sigma$ ) From $-$ 30 $^{\circ}$ C to 125 $^{\circ}$ C

Abstract: This paper describes the design of a CMOS smart temperature sensor intended for RFID applications. The PNP-based sensor uses a digitally-assisted readout scheme that reduces the complexity and area of the analog circuitry and simplifies trimming. A key feature of this scheme is an energy-efficient two-step zoom ADC that combines a coarse 5-bit SAR conversion with a fine 10-bit ΣΔ conversion. After a single trim at 30°C, the sensor achieves an inaccuracy of ±0.2°C (3σ) from -30°C to 125°C. It also achieves a resolution of 15 mK at a conversion rate of 10 Hz. The sensor occupies only 0.12 mm2 in a 0.16 μm CMOS process, and draws 4.6 μA from a 1.6 V to 2 V supply. This corresponds to a minimum power dissipation of 7.4 μW, the lowest ever reported for a precision temperature sensor.

12.7 A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from −40 to 125°C

Abstract: This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.

Design Of Analog Cmos Integrated Circuits

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A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\pm$ 0.15 $ ^{\circ}$ C (3 $\sigma$ ) From $-$ 55 $^{\circ}$ C to 125 $^{\circ}$ C

Abstract: This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy- efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C (3σ) from -55°C to 125°C . Over the same range, devices from a second lot achieved an inaccuracy of ±0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.

RF power harvesting: a review on designing methodologies and applications

Abstract: Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

A system-on-chip EPC Gen-2 passive UHF RFID tag with embedded temperature sensor

Abstract: This paper presents a system-on-chip passive RFID tag with an embedded temperature sensor for the EPC Gen-2 protocol in the 900-MHz UHF frequency band. A dual-path clock generator is proposed to support both applications with either very accurate link frequency or very low power consumption. On-chip temperature sensing is accomplished with a time-readout scheme to reduce the power consumption. Moreover, a gain-compensation technique is proposed to reduce the temperature sensing error due to process variations by using the same bandgap reference of the tag to generate bias currents for both the current-to-digital converter and the clock generator of the sensor. Also integrated is a 128-bit one-time-programmable (OTP) memory array based on gate-oxide antifuse without extra mask steps. Fabricated in a standard 0.18- μm CMOS process with analog options, the 1.1-mm2 tag chip is bonded onto an antenna using flip-chip technology to realize a complete tag inlay, which is successfully demonstrated and evaluated in real-time wireless communications with commercial RFID readers. The tag inlay achieves a sensitivity of -6 dBm and a sensing inaccuracy of ±0.8° C (3 σ inaccuracy) over operating temperature range from -20°C to 30°C with one-point calibration.

A Fully-Integrated 71 nW CMOS Temperature Sensor for Low Power Wireless Sensor Nodes

Abstract: We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems. Sensor operation is based on temperature independent/dependent current sources that are used with oscillators and counters to generate a digital temperature code. A conventional approach to generate these currents is to drop a temperature sensitive voltage across a resistor. Since a large resistance is required to achieve nWs of power consumption with typical voltage levels (100 s of mV to 1 V), we introduce a new sensing element that outputs only 75 mV to save both power and area. The sensor is implemented in 0.18 μm CMOS and occupies 0.09 mm 2 while consuming 71 nW. After 2-point calibration, an inaccuracy of + 1.5°C/-1.4°C is achieved across 0 °C to 100 °C. With a conversion time of 30 ms, 0.3 °C (rms) resolution is achieved. The sensor does not require any external references and consumes 2.2 nJ per conversion. The sensor is integrated into a wireless sensor node to demonstrate its operation at a system level.