K
Kang-Jun Baeg
Researcher at Pukyong National University
Publications - 122
Citations - 7076
Kang-Jun Baeg is an academic researcher from Pukyong National University. The author has contributed to research in topics: Field-effect transistor & Organic field-effect transistor. The author has an hindex of 38, co-authored 114 publications receiving 6195 citations. Previous affiliations of Kang-Jun Baeg include Hanbat National University & Korea Electrotechnology Research Institute.
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Organic light detectors: photodiodes and phototransistors.
TL;DR: This review suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto -electronic switch and memory.
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Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
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Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.
TL;DR: Recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon.
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Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**
TL;DR: In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.
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Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory
TL;DR: In this paper, a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported.