An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Preface Introduction Conventional Coplanar Waveguide Conductor-Backed Coplanar Waveguide Coplanar Waveguide with Finite-Width Ground Planes Coplanar Waveguide Suspended Inside A Conducting Enclosure Coplanar Striplines Microshield Lines and Coupled Coplanar Waveguide Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides Coplanar Waveguide Discontinuities and Circuit Elements Coplanar Waveguide Transitions Directional Couplers, Hybrids, and Magic-Ts Coplanar Waveguide Applications References Index

Coplanar waveguide circuits, components, and systems

Millimeter-wave (mmWave) radar is widely used in vehicles for applications such as adaptive cruise control and collision avoidance. In this paper, we propose an IEEE 802.11ad-based radar for long-range radar (LRR) applications at the 60 GHz unlicensed band. We exploit the preamble of a single-carrier physical layer frame, which consists of Golay complementary sequences with good correlation properties that make it suitable for radar. This system enables a joint waveform for automotive radar and a potential mmWave vehicular communication system based on the mmWave consumer wireless local area network standard, allowing hardware reuse. To formulate an integrated framework of vehicle-to-vehicle communication and LRR, we make typical assumptions for LRR applications, incorporating the full duplex radar operation. This new feature is motivated by the recent development of systems with sufficient isolation and self-interference cancellation. We develop single- and multi-frame radar receiver algorithms for target detection as well as range and velocity estimation for both single- and multi-target scenarios. Our proposed radar processing algorithms leverage channel estimation and time–frequency synchronization techniques used in a conventional IEEE 802.11ad receiver with minimal modifications. Analysis and simulations show that in a single-target scenario, a gigabits-per-second data rate is achieved simultaneously with cm-level range accuracy and cm/s-level velocity accuracy. The target vehicle is detected with a high probability (above 99.99 $\%$ ) at a low false alarm rate of 10 $^{-6}$ for an equivalent isotropically radiated power of 40 dBm up to a vehicle separation distance of about 200 m. The proposed IEEE 802.11ad-based radar meets the minimum accuracy/resolution requirement of range and velocity estimates for LRR applications.

IEEE 802.11ad-Based Radar: An Approach to Joint Vehicular Communication-Radar System

Future large-scale space solar power (SSP) will form a very complex integrated system of systems requiring numerous significant advances in current technology and capabilities. Ongoing technology developments have narrowed many of the gaps, but major technical, regulatory, and conceptual hurdles remain. Continuing systems concept studies and analyses will be critical to success, as will following a clear strategic R&T road map. This road map must assure both an incremental and evolutionary approach to developing needed technologies and systems is followed, with significant and broadly applicable advances with each increment. In particular, the technologies and systems needed for SPS must support highly leveraged applicability to needs in space science, robotic and human exploration, and the development of space. Considerable progress has been made in the critical area of microwave power transmission. At 5.8 GHz, DC-RF converters with efficiencies over 80% are achievable today. Rectennas developed at 5.8 GHz have also been measured with efficiencies greater than 80%. With optimized components in both the transmitter and rectenna, an SPS system has the potential of a DC-to-DC efficiency of 45%.

Space solar power programs and microwave wireless power transmission technology

The feasibility of integrating antennas and required circuits to form wireless interconnects in foundry digital CMOS technologies has been demonstrated The key challenges including the effects of metal structures associated with integrated circuits, heat removal, packaging, and interaction between transmitted and received signals, and nearby circuits appear to be manageable This technology can potentially be applied for implementation of a true single-chip radio for general purpose communication, on-chip and inter-chip data communication systems, RFID tags, RF sensors/radars, and others

On-chip antennas in silicon ICs and their application

The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated ou 10 000 Omega · cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic-hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.

Silicon High Resistivity Substrate Millimeter-Wave Technology

This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC's) on high-resistivity substrates are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field-theoretical simulations and verified by S-parameter measurements up to 110 GHz.

Coplanar passive elements on Si substrate for frequencies up to 110 GHz

Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f/sub max/ values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed. >

Si/SiGe MMIC's

The invention relates to a semiconductor device which includes a packaged electrical component such as an IC chip, wherein terminal posts are realized within the chip area without additional wafer surface being required beyond the chip edge. A direct feedthrough of the individual electrical connections by way of downwardly extending terminal posts that are connected to bonding pads at the top of the chip results in a small lead length and thus lesser parasitic influences, which in turn results in optimum conditions for use at super-high frequencies. Furthermore, a process for making the semiconductor device offers the option of forming deep vertical trenches on the chip edge and to thus implement separation etching for dicing. During this process, the coverage of the side surface with encapsulating material effects a passivation on the chip edge without further outlay. Expensive rewiring of the connections on the bottom side of the chip is not necessarily due to the terminal posts.

Semiconductor devices with CSP packages and method for making them

Rectifying antennas (rectennas) are realized on high-resistivity silicon substrates using silicon monolithic millimeter-wave integrated circuit (SIMMWIC) technology. Monolithically integrated coplanar Schottky barrier diodes are used as rectifying elements embedded in different antenna structures. Both p- and n-type Schottky barrier diodes are realized with cutoff frequencies up to 1 THz. The rectennas are combined with a CMOS preamplifier mounted as a multichip module (MCM) next to the rectenna on a high-resistivity silicon substrate. An amplification of 32 dB is measured. Maximum sensitivity of the detector circuit including preamplification is 1600 mV/mW/spl middot/cm/sup -2/ at 94.6 GHz. For a monolithic integration of high-frequency circuits with low-frequency control and signal-processing electronics, the monolithic integration of CMOS circuitry on high-resistivity silicon is discussed.

Karl Strohm

Papers

Silicon High Resistivity Substrate Millimeter-Wave Technology

Coplanar passive elements on Si substrate for frequencies up to 110 GHz

Si/SiGe MMIC's

Semiconductor devices with CSP packages and method for making them

SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility