Katsuya Okumura

TL;DR: In this article, the authors demonstrate the feasibility of ultrahigh-density bumpless interconnect by realizing the ultrafine pitch bonding of Cu electrodes at room temperature by using surface-activated bonding (SAB) method.

TL;DR: Flash-lamp annealing (FLA) as mentioned in this paper is a new method of activating implanted impurities, which is able to reduce the time of the heating cycle to within the millisecond range.

TL;DR: In this article, the problem of providing a multi-chip semiconductor device whose device area is small, whose constitution is simple and whose thickness is thin by providing a connection plug formed of metal in a through hole passing through a semiconductor substrate and an inter-layer insulating film and electrically connecting one chip with the other chip through the connection plug was addressed.

TL;DR: In this article, an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them.

TL;DR: In this article, the authors propose a method of manufacturing a semiconductor device in which optimum process conditions in each manufacturing process can be adopted at high speed for each wafer, and a new product is formed on the wafer based on information indicated on the ID mark.