An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Method of manufacturing semiconductor device and substrate processing apparatus

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

Substrate processing apparatus and method for manufacturing semiconductor device

An atomic layer deposition (ALD) apparatus capable of forming a conformal ultrathin-film layer with enhanced step coverage is disclosed. The apparatus includes an ALD reactor supporting therein a wafer, and a main pipe coupled thereto for constant supply of a carrier gas. This pipe has two parallel branch pipes. Raw material sources are connected by three-way valves to one branch pipe through separate pipes, respectively. Similarly, oxidant/reducer sources are coupled by three-way valves to the other branch pipe via independent pipes. ALD works by introducing one reactant gas at a time into the reactor while being combined with the carrier gas. The gas is “chemisorped” onto the wafer surface, creating a monolayer deposited. During the supply of a presently selected material gas from its source to a corresponding branch pipe, this gas passes through its own pipe independently of the others. An ALD method is also disclosed.

Film forming apparatus and method

PROBLEM TO BE SOLVED: To provide film deposition equipment using an ALD material supply system which can form many kinds of thin films such as a metal film, a metal oxide film, or a mixed film of two or more kinds of these films with uniformity in film thickness along the plane and in composition at good reproducibility. SOLUTION: The ALD film deposition equipment comprises an ALD reactor 101, a wafer 102, a susceptor 103, and a heater 104. A main carrier gas is divided into two parts and are passed through a double injector, the ALD reactor, a throttle valve, etc., and then is exhausted. A film deposition material or an oxidant is stored in a material tank set to such a temperature as to allow the film deposition material or the oxidant to have sufficient high steam pressure. The carrier gas is supplied to an entrance valve of the material tank, and the film deposition material or oxidant is transported out of the tank on the carrier gas through an exit valve. A main carrier gas line is divided into two lines, each of which is equipped with a plurality of three way valves 4. Film deposition materials of different kinds are supplied to one line while oxidants or reducing agents of different kinds are supplied to the other line, which makes it possible to directly supply individual gases to the main carrier gas lines without mixing them. COPYRIGHT: (C)2006,JPO&NCIPI

Film deposition equipment and film deposition method

PROBLEM TO BE SOLVED: To provide a method for forming a thin film for lowering concentration of impurity caused by a ligand by using a simple device SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorbing the metal complex by intermittently supplying the metal complex on the surface of the substrate, next, intermittently supplies hydrogen gas on the surface of the substrate, removes excessive hydrogen gas by purging the surface of the substrate with the inert gas after removing the ligand of the adsorbed metal complex, thereafter, intermittently supplies oxidation gas on the surface of the substrate, and removes excessive oxidation gas by purging the surface of the substrate with the inert gas after changing the terminal group of the adsorbed metal complex into a hydroxyl group The method forms the thin film having a prescribed film thickness by repeating the above process COPYRIGHT: (C)2005,JPO&NCIPI

Kawahara Takaaki

Papers

Film forming apparatus and method

Film deposition equipment and film deposition method

Method for forming thin film