Kazuhiro Bessho

TL;DR: In this article, a spin torque transfer magnetization switching (STS) based nonvolatile memory called spin-RAM was presented for the first time, which is based on magnetization reversal through an interaction of a spin momentum-torque-transferred current and a magnetic moment of memory layers in magnetic tunnel junctions (MTJ).

TL;DR: In this article, a storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with tunnel insulation layer, and with the direction of magnetization of storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction.

TL;DR: In this paper, the memory element includes a memory layer that retains information based on a magnetization state of a magnetic material, in which a magnetized pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change the magnetization direction, and a fine oxide is dispersed in an entire or part of a ferromagnetic layer forming the memory.

TL;DR: In this article, a storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure.

TL;DR: A magnetoresistive effect element as discussed by the authors is a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7 ) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface.