An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process

A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Method of forming insulation film by modified PEALD

The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.

Patterning process and resist composition

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

Double patterning process

PROBLEM TO BE SOLVED: To provide a pattern using a resist composition that exhibits a receding contact angle large enough for immersion exposure even with no protective film, achieves high resolution in development with an organic solvent, and that has high durability against pattern collapse.SOLUTION: The resist composition comprises a polymeric compound containing a repeating unit having a structure of a hydroxyl group protected with an acid labile group, a photo-acid generator, an organic solvent, and a polymeric additive containing a repeating unit having a fluorine atom and containing no hydroxyl group, in which the content of the polymeric additive is 1 to 30 mass% with respect to the content of the whole polymeric compound. A method for forming a negative pattern is provided, including the steps of: applying the above resist composition on a substrate and heat treating to form a resist film; then exposing the resist film to a high-energy beam; heat treating after the exposure; and selectively dissolving an unexposed part of the resist film by use of a developing solution containing an organic solvent. The inventive resist composition exhibits a receding contact angle large enough for immersion exposure, and in combination with negative development with an organic solvent, exhibits high resolution and a wide range of focus depth for a fine trench pattern or a hole pattern, enhances perpendicularity of a line pattern side wall and improves durability against pattern collapse.

Pattern forming method and resist composition

PROBLEM TO BE SOLVED: To provide a patterning process for forming hole patterns by positive-negative inversion using a photoresist composition that can achieve high dissolution contrast and control acid diffusion in organic solvent development, and particularly a mask having a lattice pattern formed thereon for forming a hole pattern through a single process of light exposure and development.SOLUTION: A patterning process is provided, which comprises steps of: applying the following resist composition on a substrate and heating to form a resist film; exposing the resist film with a high-energy beam and heating; and then dissolving an unexposed portion by using a developing solution comprising an organic solvent to obtain a negative pattern in which an exposed portion is not dissolved. The resist composition comprises: a polymeric compound including a repeating unit having a nitrogen atom that is bonded to an acid labile group; an acid generator; and an organic solvent. The resist film shows high solubility of an unexposed portion and low solubility of an exposed portion, that is, a high dissolution contrast, and has an extremely high effect of suppressing acid diffusion, in the process of forming an image by positive negative reversal by development with an organic solvent. A fine hole pattern can be formed with good dimension controllability by exposing the above resist film by use of a mask having a dot pattern or a lattice pattern, and developing the resist film with an organic solvent.

Patterning process and resist composition used for the same

PROBLEM TO BE SOLVED: To provide a resist composition providing a high dissolving contrast, a satisfactory nano edge-roughness and a satisfactory pattern rectangularity in organic solvent development, and a pattern forming method for forming a hole pattern by performing positive/negative reversal using a mask disposed with a lattice pattern for forming the hole pattern.SOLUTION: The resist composition contains polymeric compound including a repeating unit which has a hydroxy group protected by an acetal protective group decomposable under the action of an acid, onium salt type photoacid generator which generates sulfonic acid and onium salt type photoacid generator which generates carboxylic acid. A resist film includes a polymeric compound including repeating unit, in which a hydroxy group protected by an acetal protective group decomposable under the action of an acid, is protected by an acetal, a compound which generates sulfonic acid receiving high-energy rays and a compound which generates carboxylic acid. The resist film has a characteristic of a high dissolving contrast in which an unexposed part dissolves quickly and an exposed part dissolves slowly in forming positive/negative reverse image developed with an organic solvent, and a characteristic that the nano edge roughness is reduced. With this, a minute hole pattern can be formed under a satisfactory dimensional control with a high sensitivity.

Kazuhiro Katayama

Papers

Patterning process and resist composition

Double patterning process

Pattern forming method and resist composition

Patterning process and resist composition used for the same

Resist composition and pattern forming method