K
Kazushige Ueda
Researcher at Kyushu Institute of Technology
Publications - 72
Citations - 6184
Kazushige Ueda is an academic researcher from Kyushu Institute of Technology. The author has contributed to research in topics: Band gap & Thin film. The author has an hindex of 33, co-authored 72 publications receiving 5853 citations. Previous affiliations of Kazushige Ueda include Tokyo Institute of Technology.
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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions
TL;DR: In this article, the electronic properties of layered oxychalcogenides have been compared to those of LaCuOCh, with an emphasis on the electronic configurations of Bi3+ (5d106s2) and La3+(5d06s0).
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New ultraviolet‐transport electroconductive oxide, ZnGa2O4 spinel
TL;DR: In this paper, a spinel structure of ZnGa2O4 has been used to measure the optical and electrical properties of the material, and it was found to have a wider band gap (∼5 eV) than ITO (indium tin oxide).
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Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy
Hiromichi Ohta,Kenji Nomura,Masahiro Orita,Masahiro Hirano,Kazushige Ueda,Toshiyuki Suzuki,Yuichi Ikuhara,Hideo Hosono +7 more
TL;DR: In this article, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified, while the ratio of the thickness of both layers controls the film composition.