An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

CMOS image sensors: electronic camera-on-a-chip

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

CMOS image sensors: Electronic camera-on-a-chip

A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level

Solid-state image-sensing device

When pixels are simply skipped while keeping both an order of pixel information and a spatial positional relation the same as those in all-pixel readout, since a distance between pixels to be read out increases, the Nyquist frequency decreases and aliasing noise increases A 5×5 pixel block is set as a unit pixel block and pieces of pixel information in first, third, and fifth columns of first, third, and fifth rows of a pixel arrangement are added and outputted as an output in an ath row and an ath column of the unit pixel block Then, pieces of pixel information in sixth, eighth, and tenth columns of the first, the third, and the fifth rows of the pixel arrangement are added and outputted as an output in the ath row and a bth column of the unit pixel block Subsequently, pieces of pixel information are added and outputted up to a last column or a column near the last column Thereafter, pieces of pixel information in the first, the third, and the fifth columns of the sixth, the eighth, and the tenth rows of the pixel arrangement are added and outputted as an output in a bth row and the ath column of the unit pixel block Subsequently, all arbitrary pixels are read out while repeating the same operation and skipping and adding pieces of pixel information

Solid-state image pickup device and drive method thereof

In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

X-y address type solid state image pickup device and method of producing the same

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode A silicide film using an active region may also be used for the registration mark Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed

Solid state image pickup device and method of producing solid state image pickup device

PROBLEM TO BE SOLVED: To improve an image processing speed, and realize concurrent operations in a screen, easiness in manufacturing process simultaneously with improvement in image quality, improvement of manufacturing yield, and suppression of current consumption for simultaneously driving all pixels or many pixels in a semiconductor module provided with a MOS solid-state imaging device. SOLUTION: The rear surface light input MOS solid-state imaging device 32 where micropads 34, 37 are formed in the side of a wiring layer for each unit pixel cell or the cell summarizing a plurality of pixels, and a signal processing chip 33 where micropads 35, 38 are formed in the side of the wiring layer at the location corresponding to micropads 34, 37 of the MOS solid-state imaging device 32, are connected with micro-bumps 36, 39. COPYRIGHT: (C)2006,JPO&NCIPI

Semiconductor module and mos solid-state imaging device

PROBLEM TO BE SOLVED: To solve the problem of such a pixel structure as the incident light is taken into a photodiode through an interconnect layer that a part of light condensed through a microlens is sputtered by the interconnect. SOLUTION: In an X-Y address type solid state image sensor, represented by a CMOS image sensor, an interconnect layer 38 is formed on one side of a silicon layer 31 in which a photodiode layer 37 is formed and visible light is taken in from the other side of the silicon layer 31, i.e., the side opposite to the interconnect layer 38 (rear surface side). Since such a rear surface light receiving type pixel structure is employed, the interconnect layer can be formed without taking account of the light receiving face and the degree of freedom is increased in the interconnection of pixels.

Keiji Mabuchi

Papers

Solid-state image pickup device and drive method thereof

X-y address type solid state image pickup device and method of producing the same

Solid state image pickup device and method of producing solid state image pickup device

Semiconductor module and mos solid-state imaging device

X-y address type solid state image sensor and its fabricating method