K
Keith R. Evans
Researcher at Wright-Patterson Air Force Base
Publications - 170
Citations - 4457
Keith R. Evans is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 33, co-authored 170 publications receiving 3991 citations.
Papers
More filters
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Anomalous hall-effect results in low-temperature molecular-beam-epitaxial GaAs : hopping in a dense EL2-like band
TL;DR: La conduction a temperature ambiante est due au saut (du second plus proche voisin) active, dans une bande de defaut profond de concentration 3×10 19 cm −3 , d'energie E c -0,75 eV.
Journal ArticleDOI
GaN Substrates for III-Nitride Devices
TL;DR: The recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.
Patent
Non-polar and semi-polar GaN substrates, devices, and methods for making them
TL;DR: In this article, a re-growth of (Al, Ga, In)N seed crystal is described, where the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of nonpolar and semi-polar substrates.
Journal ArticleDOI
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an EL 2-like defect
TL;DR: In this paper, infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-rich molecular-beam-epitaxial GaAs layers grown at very low temperature (200 \ifmmode^\circ\else\textdegree\fi{}C).