Author
Kengo Akimoto
Bio: Kengo Akimoto is an academic researcher. The author has contributed to research in topics: Semiconductor device & Thin-film transistor. The author has an hindex of 1, co-authored 1 publications receiving 1501 citations.
Topics: Semiconductor device, Thin-film transistor
Papers
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01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1,501 citations
Cited by
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13 Aug 2014TL;DR: In this paper, the authors presented a heterocyclic compound and an organic light-emitting device including the HOC compound, which have high efficiency, low driving voltage, high luminance and long lifespan.
Abstract: The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.
1,346 citations
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25 Sep 2013
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.
1,136 citations
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23 Jan 2004TL;DR: In this article, a transistor having a gate electrode, a source electrode, drain electrode, dielectric material and a channel region disposed between the source electrode and drain electrode is defined.
Abstract: A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.
1,075 citations
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17 Jan 2006
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
1,043 citations
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07 Jan 2008TL;DR: In this paper, a thin film transistor (TFT) and a flat panel display comprising the TFT are provided, where a gate, a gate insulating layer, a channel layer that contacts the gate, and a source that contacts an end of the channel layer, where the source is an amorphous oxide semiconductor layer.
Abstract: A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
1,038 citations