Kenji Hiraga

Bio: Kenji Hiraga is an academic researcher from Tohoku University. The author has contributed to research in topics: Quasicrystal & Electron diffraction. The author has an hindex of 47, co-authored 390 publications receiving 10598 citations.

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Abstract: ZnO single crystal thin films were grown on c-plane sapphire using oxygen microwave plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate surfaces were obtained by pre-growth cleaning procedures involving an oxygen plasma treatment. A two dimensional nucleation during the initial growth which is followed by a morphology transition to three dimensional nucleation was observed by in situ reflection high energy electron diffraction. X-ray diffraction (XRD) and photoluminescence investigations suggest that the ZnO epilayer consists of a high quality layer on top of a transition layer containing a high density of defects in the interfacial region. A full width at half maximum (FWHM) of 0.005° is obtained for the ZnO(0002) diffraction peak in an XRD rocking curve, while a broad tail extending from the peak can also be observed. The photoluminescence spectra exhibit dominant bound exciton emission with a FWHM of 3 meV at low temperatures and free exciton emission combined with a ver...

Permanent magnet materials based on the rare earth-iron-boron tetragonal compounds

Abstract: Structural and metallographic studies were carried out on the Nd-Fe-B alloy system as well as the Nd-Fe-B tetragonal compound on which record high energy magnets have been developed using a powder metallurgical technique. The study on the new magnet has also been extended to other R-Fe-B componds containing various rare earths (R) and to R-Fe-Co-B alloys. The results are as follows; (1) The sintered Nd-Fe-B magnet is composed of mainly three phases, the Nd 2 Fe 14 B matrix phase plus Nd-rich phase and B-rich phase ∼ Nd 2 Fe 7 B 6 ) as minor phases. (2) Nd 2 Fe 14 B has the space group of P4 2 /mnm. The crystal structure of this phase can be described as a layer structure with alternate stacking sequence of a Nd-rich layer and a sheet formed only by Fe atoms. The sheet of Fe atoms has a structure similar to the σ-phase found in Fe-Cr and Fe-Mo systems. (3) The Nd-rich phase containing more than 95 at.% Nd, 3∼5 at.% Fe and a trace of B has fcc structure with a=0.52 nm. This phase is formed around grain boundaries of the matrix phase. Nd 2 Fe 7 B 6 phase has an one-dimentional incommensurate structure with a=a o and c\simeq8 C o , based on a tetragonal structure with a o =0.716 nm and c o =0.391 nm. (4) In the as sintered Nd 15 Fe 77 B 8 alloy periodic strain contrasts are observed along grain boundaries, which disappear after annealing at 870K. This may be related to the enhancement of the intrinsic coercivity of the sintered magnet by post sintering heat treatment. (5) Stable R 2 Fe 14 B phases are formed by various rare earths except La. Of all the R 2 Fe 14 B compounds, Nd 2 Fe 14 B has the maximum saturation magnetization as high as 1.57 T. Dy and Tb form R 2 Fe 14 B phases with the highest anisotropies. Small additions of these elements greatly enhance the coercive force of the Nd 2 Fe 14 B base magnet. (6) Partial replacement of Fe by Co raises the Curie temperature of the Nd 2 Fe 14 B compound, which improves the temperature coefficient of the remanence of the magnet. But the intrinsic coercive force is decreased by the Co addition.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Fundamentals of zinc oxide as a semiconductor

Abstract: In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for GaN and related alloys, the availability of high-quality large bulk single crystals, the strong luminescence demonstrated in optically pumped lasers and the prospects of gaining control over its electrical conductivity have led a large number of groups to turn their research for electronic and photonic devices to ZnO in its own right. The high electron mobility, high thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO suitable for a wide range of devices, including transparent thin-film transistors, photodetectors, light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of ZnO has remained a major challenge. While a number of research groups have reported achieving p-type ZnO, there are still problems concerning the reproducibility of the results and the stability of the p-type conductivity. Even the cause of the commonly observed unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to address these issues consists of growing high-quality single crystalline bulk and thin films in which the concentrations of impurities and intrinsic defects are controlled. In this review we discuss the status of ZnO as a semiconductor. We first discuss the growth of bulk and epitaxial films, growth conditions and their influence on the incorporation of native defects and impurities. We then present the theory of doping and native defects in ZnO based on density-functional calculations, discussing the stability and electronic structure of native point defects and impurities and their influence on the electrical conductivity and optical properties of ZnO. We pay special attention to the possible causes of the unintentional n-type conductivity, emphasize the role of impurities, critically review the current status of p-type doping and address possible routes to controlling the electrical conductivity in ZnO. Finally, we discuss band-gap engineering using MgZnO and CdZnO alloys.

Recent Advances in ZnO Materials and Devices

Abstract: Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and UV light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials, such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications.